Semiconductor device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Mitinori Iwai
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Abstract
To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
Claims10
A semiconductor device having a thin film transistor, said semiconductor device comprising:
- an insulating film formed over a substrate;
- and
- a semiconductor film formed over said insulting film,
- wherein said insulating film comprises a silicon nitride oxide film in which a concentration ratio of nitrogen to silicon therein undergoes a continuous change within a range of 0.3 to 1.6.
A semiconductor device having a thin film transistor, said semiconductor device comprising:
- an insulating film formed over a substrate;
- and
- a semiconductor film formed over said insulating film,
- wherein said insulating film comprises a silicon nitride oxide film in which a concentration ratio of oxygen to silicon therein undergoes a continuous change within a range of 0.1 to 1.7.
A semiconductor device having a thin film transistor, said semiconductor device comprising:
- an insulating film formed over a substrate;
- and
- a semiconductor film formed over said insulating film,
- wherein said insulating film comprises a silicon nitride oxide film in which a concentration ratio of nitrogen to silicon therein undergoes a continuous change within a range of 0.3 to 1.6, and
- wherein a concentration ratio of oxygen to silicon therein undergoes a continuous change within a range of between 0.1 to 1.7.
A semiconductor device having a thin film transistor, said semiconductor device comprising:
- a first insulating film comprising a silicon nitride oxide film formed over a substrate;
- a second insulating film formed in contact with said first insulating film;
- and
- a semiconductor film formed over said first and second insulating films,
- wherein a concentration ratio of nitrogen to silicon in said first insulating film undergoes a continuous change within a range of 0.3 to 1.6.
A semiconductor device having a thin film transistor, said semiconductor device comprising:
- a first insulating film comprising a silicon nitride oxide film formed over a substrate;
- a second insulating film formed in contact with said first insulating film;
- and
- a semiconductor film formed over said first and second insulating films,
- wherein a concentration ratio of oxygen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.1 to 1.7.
A semiconductor device having a thin film transistor, said semiconductor device comprising:
- a silicon nitride oxide film formed over a substrate;
- a silicon oxide film formed in contact with said silicon nitride oxide film;
- and
- a semiconductor film formed over said silicon oxide film,
- wherein a concentration ratio of nitrogen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.3 to 1.6.
A semiconductor device having a thin film transistor, said semiconductor device comprising:
- a silicon nitride oxide film formed over a substrate;
- a silicon oxide film formed in contact with said silicon nitride oxide film;
- and
- a semiconductor film formed over said silicon oxide film,
- wherein a concentration ratio of oxygen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.1 to 1.7.
Dependencies are inferred from the claim text.