Semiconductor polymers, method for the production thereof and an optoelectronic component
AssigneeOSRAM Opto Semiconductors GmbH
InventorsGunther Vogg, Martin Brandt, Martin Stutzmann
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Abstract
Layered germanium polymers that are semiconductive and demonstrate a strong red or infrared luminescence are produced through the topochemical conversion of calcium digermanide. Furthermore, silicon/germanium layer polymers can also be produced in this manner. These layer polymers can be produced epitaxially on substrates comprising crystalline germanium, and can be used to construct light-emitting optoelectronic components such as light-emitting diodes or lasers.
Claims35
A germanium layer polymer, characterized in that the germanium atoms form surface plane structures, and these surface planes are layered on top of one another.
A silicon-germanium layer polymer, characterized in that silicon atoms and germanium atoms form mixed surface plane structures, and these surface planes are layered on top of one another.
An optoelectronic component, characterized in that the component has a layer polymer (10) containing semiconductor atoms, in which the semiconductor atoms are disposed in surface plane structures and the surface plane structures are layered on top of one another.
An integrated circuit, characterized in that it has a layer polymer containing semiconductor atoms, in which the semiconductor atoms are disposed in surface plane structures and the surface plane structures are layered on top of one another.
Dependencies are inferred from the claim text.