Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication

A semiconductor structure comprising:

• at least one resistor;
• at least one capacitor;
• at least one fuse;
• and
• at least one diffusion barrier;
• said at least one resistor, at least one capacitor, at least one fuse and at least one diffusion barrier being formed of refractory metal-silicon-nitrogen.

A method for fabricating a semiconductor structure containing a fuse element comprising the steps of:

• providing a pre-processed substrate;
• forming a fuse element of refractory metal-silicon-nitrogen on said substrate;
• and
• ion-implanting said fuse element and increasing the sheet resistance of said fuse element to at least 3000 Ω/□.

A method for fabricating a semiconductor structure containing a trimable resistor element comprising the steps of:

• providing a pre-processed substrate;
• forming a trimable resistor element of a refractory metal-silicon-nitrogen material having a resistivity lower than 450 μΩ-cm;
• heat treating said trimable resistor element to induce crystallinity;
• and
• forming said trimable resistor element that has at least a 10% decrease in resistivity.

A method for fabricating a semiconductor structure containing a diffusion barrier layer comprising the steps of:

• providing a pre-processed semiconductor substrate;
• forming an electrical contact on top of said semiconductor substrate;
• and
• depositing a layer of refractory metal-silicon-nitrogen on said electrical contact forming said diffusion barrier layer.