Semiconductor package for multiple high power transistors

A configuration for combining multiple semiconductor devices, comprising:

• a) a supporting structure;
• b) a plurality of semiconductor devices mounted on the supporting structure and disposed to be connected in a parallel configuration;
• c) the plurality of semiconductor devices has a common input terminal, a common output terminal, and a common reference terminal;
• d) each of the semiconductor devices having an input terminal, an output terminal, and a reference terminal;
• e) each semiconductor device input terminal has an electrical connection with an inductance L1 to an input distribution network;
• f) the input distribution network connects each semiconductor device input terminal to a common point where all the semiconductor device input terminals are connected together wherein the inductance between each semiconductor input terminal and the common point of connection is L2;
• and
• g) an inductance L3 between the point where all input terminals of each semiconductor device is connected together and the common input terminal, wherein L2 is at least 10 percent larger than the sum of L1 and L3.