US 2003/0151104 A1 · Single crystal, dual wafer, tunneling sensor or switch with substrate protrusion and a method of making same

Abstract

A method of making a micro electromechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. At least one of the mating structures includes a protrusion extending from a major surface of at least one of said substrates. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

Claims66

Dependent claims

A method of making a MEM switch or tunneling sensor comprising the steps of:

(a) defining a cantilevered beam structure and a mating structure on a first substrate or wafer;
(b) forming at least one contact structure and a mating structure on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer, at least one of the two mating structures including a protrusion extending from the substrate or wafer from which the at least one protrusion is defined;
(c) positioning the mating structure of the first substrate or wafer into a confronting relationship with the mating structure of the second substrate or wafer;
(d) bonding a layer associated with said mating structure on the first substrate or wafer with a layer associated with the mating structure on the second substrate or wafer;
(e) removing at least a portion of the first substrate or wafer to release the cantilevered beam structure.

2 more elements

Dependencies are inferred from the claim text.

Single crystal, dual wafer, tunneling sensor or switch with substrate protrusion and a method of making same

Life of this patent

Single crystal, dual wafer, tunneling sensor or switch with substrate protrusion and a method of making same

Life of this patent

Abstract

Claims66