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US 2003/0151099 A1Published application
Semiconductor device including multiple field effect transistors and manufacturing method thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsKenji Yoshiyama, Motoshige Igarashi, Keiichi Yamada, Katsuya Okada, Keiichi Higashitani
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Abstract
A semiconductor device and a manufacturing method thereof permitting the quality of gate insulating films to be prevented from deteriorating and thereby permitting electrical characteristics of the device to be prevented from deteriorating are provided. In a semiconductor device including a plurality of field effect transistors, an oxidation protection film 21 is formed on a side of one gate electrode 19.
Claims17
A semiconductor device including a plurality of field effect transistors, including a first field effect transistor and a second field effect transistor,
- said first field effect transistor including,
- a pair of first source/drain regions formed on a main surface of a semiconductor substrate, spaced apart from each other and having a first channel region therebetween,
- a first gate insulating film formed on said channel region and having a first thickness, and
- a first gate electrode formed on said first gate insulating film,
- said second field effect transistor including,
- a pair of second source/drain regions formed on the main surface of said semiconductor substrate, spaced apart from each other and having a second channel region therebetween,
- a second gate insulating film formed on said second channel region and having a second thickness larger than said first thickness, and
- a second gate electrode formed on said second gate insulating film,
- an oxidation protection film for preventing one of said first and second gate electrodes from being oxidized being formed on a side of said gate electrode.
6 more elements
A semiconductor device including a plurality of field effect transistors including a first field effect transistor and a second field effect transistor,
- said first field effect transistor including,
- a pair of first source/drain regions formed on a main surface of a semiconductor substrate, spaced apart from each other and having a channel region therebetween,
- a first gate insulating film of a first thickness formed on said first channel region and including an oxide nitride film, and
- a first gate electrode formed on said first gate insulating film,
- said second field effect transistor including,
- a pair of second source/drain regions formed on the main surface of said semiconductor substrate, spaced apart from each other and having a second channel region therebetween,
- a second gate insulating film formed on said second channel region and having a second thickness larger than said first thickness, and
- a second gate electrode formed on said second gate insulating film.
5 more elements
A semiconductor device including a plurality of field effect transistors including a first field effect transistor and a second field effect transistor,
- said first field effect transistor including,
- a pair of first source/drain regions formed on a main surface of a semiconductor substrate, spaced apart from each other and having a first channel region therebetween,
- a first gate insulating film formed on said first channel region and having a first thickness, and
- a first gate electrode formed on said first gate insulating film,
- said second field effect transistor including,
- a pair of second source/drain regions formed on the main surface of said semiconductor substrate, spaced apart from each other and having a second channel region therebetween,
- a second gate insulating film formed on said second channel region and having a second thickness larger than said first thickness, and
- a second gate electrode formed on said second gate insulating film,
- an anti-oxidation conductive film being formed on at least one of said first and second gate insulating films.
6 more elements
A semiconductor device including a plurality of field effect transistors including a first field effect transistor and a second field effect transistor,
- said first field effect transistor including,
- a pair of first source/drain regions formed on a main surface of a semiconductor substrate, spaced apart from each other and having a channel region therebetween,
- a first gate insulating film formed on said first channel region and having a first thickness, and
- a first gate electrode formed on said first gate insulating film,
- said second field effect transistor including,
- a pair of second source/drain regions formed on the main surface of said semiconductor substrate, spaced apart from each other and having a second channel region therebetween,
- a second gate insulating film formed on said second channel region and having a second thickness larger than said first thickness, and
- a second gate electrode formed on said second gate insulating film,
- a protection conductive film being formed on and in contact with at least one of said first and second gate insulating films.
6 more elements
A method of manufacturing a semiconductor device including a plurality of field effect transistors, comprising the steps of:
- forming a first gate insulating film having a first thickness on a main surface of a semiconductor substrate;
- forming a first gate electrode on said first gate insulating film;
- introducing an impurity into the main surface of said semiconductor substrate, using said first gate electrode as a mask, thereby forming a pair of first source/drain regions spaced apart from each other and having a first channel region therebetween;
- forming a second gate insulating film having a second thickness larger than said first thickness on the main surface of said semiconductor substrate;
- forming a second gate electrode on said second gate insulating film;
- introducing an impurity into the main surface of said semiconductor substrate, using said second gate electrode as a mask, thereby forming a pair of second source/drain regions spaced apart from each other and having a second channel region therebetween;
- and
- forming an anti-oxidation conductive film on at least one of said first and second gate insulating films,
- the other one of said first and second gate insulating films being formed in the presence of said anti-oxidation conductive film.
6 more elements
A method of manufacturing a semiconductor device including a plurality of field effect transistors, comprising the steps of:
- forming a first gate insulating film having a first thickness on a main surface of a semiconductor substrate;
- forming a first gate electrode on said first gate insulating film;
- introducing an impurity into the main surface of said semiconductor substrate using said first gate electrode as a mask, thereby forming a pair of source/drain regions spaced apart from each other and having a first channel region therebetween;
- forming a second gate insulating film having a second thickness larger than the first thickness on the main surface of said semiconductor substrate;
- forming a second gate electrode on said second gate insulating film;
- introducing an impurity into the main surface of said semiconductor substrate using said second gate electrode as a mask, thereby forming a pair of second source/drain regions spaced apart from each other and having a second channel region therebetween;
- and
- forming a protection conductive film on and in contact with at least one of said first and second gate insulating films,
- the other one of said first and second gate insulating films being formed in the presence of said protection conductive film.
6 more elements
A method of manufacturing a semiconductor device including a plurality of field effect transistors, comprising the steps of:
- forming an insulating film on a main surface of a semiconductor substrate positioned in regions to form first and second field effect transistors;
- forming a resist pattern on said insulating film positioned in the region to form said second field effect transistor;
- isotropically etching away a part of said insulating film positioned in the region to form said first field effect transistor, using said resist pattern as a mask;
- removing said resist pattern;
- isotropically etching away a part of the surface of said insulating film, thereby forming first and second gate insulating films;
- forming a first gate electrode on said first gate insulating film;
- introducing an impurity into the main surface of said semiconductor substrate using said gate electrode as a mask, thereby forming a pair of first source/drain regions spaced apart from each other and having a first channel region therebetween;
- forming a second gate electrode on said second gate insulating film;
- and
- introducing an impurity into the main surface of said semiconductor substrate using said second gate electrode as a mask, thereby forming a pair of second source/drain regions spaced apart from each other and having a second channel region therebetween.
7 more elements
Dependencies are inferred from the claim text.