Semiconductor device having dual-gate structure and method of manufacturing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYukio Nishida, Katsuyuki Horita
Life of this patent
Estimating the term…
Abstract
By forming a doped polysilicon layer (PS2) containing boron through the CVD method in a material gas including a compound containing boron such as BCl3 (boron trichloride), an opening left after removing a gate electrode (11) in a region (PR) is filled with the doped polysilicon layer (PS2). In the doped polysilicon layer (PS2), boron atoms are uniformly distributed with high activation rate. Thus provided is a method of manufacturing a semiconductor device, which is capable of suppressing depletion of a gate electrode of a P-channel MOS transistor and suppressing penetration of impurity in a CMOS transistor of dual-gate structure.
Claims10
A semiconductor device comprising:
- an N-channel MOS transistor provided on a semiconductor substrate;
- and
- a P-channel MOS transistor provided on said semiconductor substrate,
- wherein said N-channel MOS transistor has a first gate insulating film selectively provided on a surface of said semiconductor substrate;
- and
- a first gate electrode provided on said first gate insulating film,
- said P-channel MOS transistor has a second gate insulating film selectively provided on said surface of said semiconductor substrate;
- and
- a second gate electrode provided on said second gate insulating film,
- said first gate electrode is formed of a first doped polysilicon layer containing an N-type impurity therein, and
- said second gate electrode is formed of a second doped polysilicon layer containing a P-type impurity therein.
A semiconductor device comprising:
- an N-channel MOS transistor provided on a semiconductor substrate;
- and
- a P-channel MOS transistor provided on said semiconductor substrate,
- wherein said N-channel MOS transistor has a first gate insulating film selectively provided on a surface of said semiconductor substrate;
- and
- a first gate electrode provided on said first gate insulating film,
- said P-channel MOS transistor has a second gate insulating film selectively provided on said surface of said semiconductor substrate;
- and
- a second gate electrode provided on said second gate insulating film,
- said first gate electrode is formed of a first doped polysilicon layer containing an N-type impurity therein, and
- said second gate electrode is formed of at least one metal layer.
Dependencies are inferred from the claim text.