US 2003/0151089 A1 · System for high-precision double-diffused MOS transistors

Abstract

The present invention provides a system for efficiently producing versatile, high-precision MOS device structures in which straight regions dominate the device's behavior, providing minimum geometry devices that precisely match large devices, in an easy, efficient and cost-effective manner. The present invention provides methods and apparatus for producing double diffused semiconductor devices that minimize performance impacts of end cap regions. The present invention provides a MOS structure having a moat region (404, 516, 616), and an oxide region (414, 512, 608) overlapping the moat region. A double-diffusion region (402, 504, 618) is formed within the oxide region, having end cap regions (406, 502, 620) that are effectively deactivated utilizing geometric and implant manipulations.

Claims20

Dependent claims

A method of producing a double diffused semiconductor device to minimize performance impact of end cap regions, comprising the steps of:

providing a moat region;
providing an oxide region overlappingly disposed over the moat region;
and
providing a double-diffusion region, disposed within the oxide region, having end cap regions thereto that are effectively deactivated.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

10/326,214Filed 19 Dec 2002

Priority

28 Dec 2001

Published

14 Aug 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 62/127
Top-view geometrical layouts of the regions or the junctions: of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
H10D 30/64
Insulated-gate field-effect transistors [IGFET]: double-diffused metal-oxide semiconductor [DMOS] FETs
H10D 62/393
Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions: body regions of…
H10D 64/519
Characterised by the conducting layers: characterised by their top-view geometrical layouts

System for high-precision double-diffused MOS transistors

Life of this patent

System for high-precision double-diffused MOS transistors

Life of this patent

Abstract

Claims20