Solid-state image pick-up device
AssigneeFuji Photo Film Co., Ltd.
InventorMakoto Shizukuishi
Life of this patent
Estimating the term…
Abstract
A honeycomb CCD, whose light receiving portion and a certain light receiving portion 105 adjoining thereto are arranged at a position to be shifted by half a pixel pitch in line and row directions, has charge transfer electrodes 111-114 formed of double-layered polysilicon electrode, a metal wiring 125, having smaller resistivity thereto, which is arranged in the longitudinal direction along each VCCD to intersect and cross over the charge transfer electrodes 111-114 being connected by a contact hole 126, by which electrical resistance of the polysilicon layer of the charge transfer electrodes can be lowered without increasing thickness thereof.
Claims20
A solid-state image pick-up device comprising:
- a plurality of light receiving portions which are arranged in a line direction at a predetermined pitch and in a row direction perpendicular thereto on a semiconductor substrate, said plurality of light receiving portions being arranged such that a pixel, which is corresponding to a light receiving portion, and another pixel, which is adjacent to said pixel and corresponding to another light receiving portion, being relatively shifted by half a pixel pitch in the line direction and the row direction;
- a vertical charge transfer portion having a vertical charge transfer path which adjoins the light receiving portions extending in the row direction, in which the electric charge generated in the light receiving portions is transferred, and a charge transfer electrodes composed of a polysilicon electrodes extending in the line direction so as to cover the vertical charge transfer path and supply a transfer pulse for controlling a potential of the vertical charge transfer path;
- a metal wiring which is provided corresponding to each electrode in the upper portion of the charge transfer electrodes, said metal wiring extending along the vertical charge transfer portion in the row direction;
- and
- a contact portion by which each of the polysilicon electrodes and the metal wiring are electrically connected.
A solid-state image pick-up device comprising:
- a plurality of light receiving portions which are arranged in a line direction at a predetermined pitch and in a row direction perpendicular thereto on a semiconductor substrate, said plurality of light receiving portions being arranged such that a pixel, which is corresponding to a light receiving portion, and another pixel, which is adjacent to said pixel and corresponding to another light receiving portion, being relatively shifted by half a pixel pitch in the line direction and the row direction;
- a vertical charge transfer portion having a vertical charge transfer path which adjoins the light receiving portions extending in the row direction, in which the electric charge generated in the light receiving portions is transferred, and a charge transfer electrodes composed of a polysilicon electrodes extending in the line direction so as to cover the vertical charge transfer path and supply a transfer pulse for controlling a potential of the vertical charge transfer path;
- a metal wiring which is provided corresponding to each electrode in the upper portion of the charge transfer electrodes, said metal wiring extending along the charge transfer electrodes in the line direction;
- and
- a contact portion by which each of the polysilicon electrodes and the metal wiring are electrically connected.
Dependencies are inferred from the claim text.