High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuits

A dynamic random access memory device comprising:

• at least one support device having a high-k dielectric gate insulator;
• and
• at least one deep trench capacitor having a high-k node dielectric;
• wherein said gate insulator and said node dielectric comprise the same material,
• wherein at least one array device having a gate insulator comprising a same material as said high-k dielectric gate insulator.

A method of producing a composite dynamic random access memory device, said method comprising:

• forming at least one support device in a substrate, wherein said at least one support device has a high-k dielectric gate insulator;
• and
• forming at least one deep trench capacitor in a substrate, wherein said at least one deep trench capacitor has a high-k node dielectric,
• wherein said gate insulator and said node dielectric comprise the same material, and
• wherein at least one array device having a gate insulator comprising a same material as said high-k dielectric gate insulator.

A method of producing a composite dynamic random access memory device, said method comprising:

• forming at least one support device in a substrate, wherein said at least one support device has a high-k dielectric gate insulator;
• forming at least one deep trench capacitor in a substrate, wherein said at least one deep trench capacitor has a high-k node dielectric;
• forming a collar insulator and a diffusion region in said deep trench capacitor;
• depositing a plurality of insulator layers on said substrate;
• and
• depositing a plurality of conductive layers on said substrate;
• wherein said gate insulator and said node dielectric comprise the same material,
• wherein at least one array device having a gate insulator comprising a same material as said high-k dielectric gate insulator.