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US 2003/0151065 A1Published application
Semiconductor element
AssigneeNGK Insulators, Ltd.
InventorsYuji Hori, Tomohiko Shibata, Osamu Oda, Mitsuhiro Tanaka
Life of this patent
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Abstract
An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.
Claims7
A semiconductor element, substantially comprising:
- a substrate,
- an underlayer, epitaxially grown on the substrate, made of a first semiconductor nitride including at least one element selected from the group consisting of Al, Ga and In, the dislocation density of the underlayer being set to 1011/cm2 or below, the crystallinity of the underlayer being set to 90 seconds or below in full width at half maximum of X-ray rocking curve at (002) reflection,
- a carrier moving layer, epitaxially grown on the underlayer, made of a second semiconductor nitride including at least one element selected from the group consisting of Al, Ga and In, the dislocation of the carrier moving layer being set to 1010/cm2 or below, the crystallinity of the carrier moving layer being set to 150 seconds or below in full width at half maximum of X-ray rocking curve at (002) reflection, and
- a carrier supplying layer, epitaxially grown on the carrier moving layer, made of a third semiconductor nitride including at least one element selected from the group consisting of Al, Ga and In.
1 more element
Dependencies are inferred from the claim text.