Semiconductor light receving element provided with acceleration spacer layers between plurality of light absorbing layers and method for fabricating the same

A method of manufacturing a semiconductor light receiving element comprising:

• forming an n electrode;
• forming an n-type semiconductor doped layer or a non-doped layer above the n electrode;
• forming a semiconductor light absorbing layer above the n-type semiconductor doped layer or the non-doped layer;
• forming a p-type semiconductor doped layer above the semiconductor light absorbing layer;
• and
• forming a p electrode above the p-type semiconductor doped layer,
• wherein the formation of the semiconductor light absorbing layer is performed by forming at least two layer portions doped to p-type, and
• forming a spacer layer for acceleration which is formed from a semiconductor material sandwiched by the two layer portions and which makes electrons and positive holes generated by incident light being absorbed at the semiconductor light absorbing layer accelerate and run.