Methods of forming semiconductor circuitry, and semiconductor constructions
AssigneeMicron Technology, Inc.
InventorsFernando Gonzalez, Er-Xuan Ping
Life of this patent
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Abstract
The invention includes a method of forming semiconductor circuitry. A monocrystalline silicon substrate is provided, and a mask is formed which covers a first portion of the substrate and leaves a second portion uncovered. A trench is formed in the uncovered portion and at least partially filled with a semiconductive material that comprises at least one atomic percent of an element other than silicon. The mask is removed and a first semiconductor circuit component is formed over the first portion of the substrate. Also, a second semiconductor circuit component is formed over the semiconductive material that at least partially fills the trench. The invention also includes semiconductor constructions.
Claims56
A method of forming semiconductor circuitry, comprising:
- providing a monocrystalline silicon substrate;
- forming a mask which covers a first portion of the substrate and leaves a second portion uncovered;
- forming a recess in the uncovered portion;
- at least partially filling the recess with a semiconductive material that comprises at least 1 atomic percent of an element other than silicon;
- removing the mask;
- forming a first semiconductor circuit component over the first portion of the substrate;
- and
- forming a second semiconductor circuit component over the semiconductive material that at least partially fills the recess.
A method of forming semiconductor circuitry, comprising:
- providing a substrate comprising a first monocrystalline material, an insulative layer over the first monocrystalline material, and a second monocrystalline material over the insulative layer and spaced from the first monocrystalline material by at least the insulative layer;
- the second monocrystalline material consisting essentially of a first element;
- forming a mask to cover a first portion of the second monocrystalline material, while leaving a second portion uncovered;
- removing at least some of the uncovered portion to form a recess;
- at least partially filling the recess with a semiconductive material that comprises at least 1 atomic percent of an element other than the first element;
- removing the mask;
- forming a first semiconductor circuit component over the first portion of the second monocrystalline material;
- and
- forming a second semiconductor circuit component over the semiconductive material that at least partially fills the recess.
A semiconductor construction, comprising:
- a bulk semiconductive material structure;
- an insulative material over the bulk semiconductive material structure;
- a mass of semiconductive material over a first portion of the insulative material and not over a second portion of the insulative material;
- the semiconductive material of the mass comprising at least 1 atomic percent of an element other than silicon;
- and
- a monocrystalline silicon layer over the second portion of the insulative material.
A semiconductor construction, comprising:
- a monocrystalline silicon material;
- and
- a mass of semiconductive material over a first portion of the monocrystalline silicon material and not over a second portion of the monocrystalline silicon material;
- the semiconductive material of the mass comprising at least 1 atomic percent of an element other than silicon.
Dependencies are inferred from the claim text.