Light emitting device

A light emitting device comprising:

• an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer;
• said active layer including,
• at least one first well layer made of a nitride compound semiconductor containing In, and
• at least one second well layer made of a nitride compound semiconductor containing In, said second well layer emitting light having a main peak wavelength which is longer than that of said first well layer, and
• a plurality of barrier layers including a first barrier layer, a second barrier layer and a third barrier layer,
• wherein said first barrier layer, said first well layer, said second barrier layer, said second well layer and said third barrier layer are laminated in order, and
• wherein a thickness of each of said first and second barrier layers is greater than a thickness of said third barrier layer.

A light emitting device comprising:

• an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer;
• said active layer including,
• at least one first well layer made of a nitride compound semiconductor containing In, and
• at least one second well layer made of a nitride compound semiconductor containing In, said second well layer emitting light having a main peak wavelength which is longer than that of said first well layer, and
• a plurality of barrier layers including a first barrier layer, a second barrier layer and a third barrier layer,
• wherein said first barrier layer, said first well layer, said second barrier layer, said second well layer and said third barrier layer are laminated in order, and
• wherein a thickness of each of said second and third barrier layers is less than a thickness of said first barrier layer.