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AssigneeSharp Kabushiki Kaisha
InventorsHidenori Kawanishi, Kei Yamamoto, Fumihiro Konushi, Yoshie Fujishiro, Toshihiko Yoshida
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A semiconductor laser device has an n-type AlGaAs first cladding layer 2, a multiple quantum well active layer 3, and a p-type AlGaAs second cladding layer 4 formed in this order and supported by an n-type GaAs substrate 1. The multiple quantum well active layer 3 has two quantum well layers 3a and barrier layers 3b provided on both sides of each quantum well layer 3a. The quantum well layers 3a are each made of In1−v1Gav1As1−w1Pw1, while the barrier layers 3b are each made of In1−v2Gav2As1−w2Pw2. Here, v1 and v2 satisfy v1<v2, while w1 and w2 satisfy w1<w2. The barrier layers have a tensile strain with respect to the GaAs substrate, while the well layers have a compressive strain with respect to the GaAs substrate.
A semiconductor laser device having a first-conductivity-type first cladding layer, an active layer, and a second-conductivity-type second cladding layer supported by a first-conductivity-type GaAs substrate and formed in this order, each of said layers being made of a III-V-group compound semiconductor, the active layer having at least one well layer and barrier layers having an energy bandgap larger than the well layer, the well layer being interposed between the barrier layers, wherein
Dependencies are inferred from the claim text.