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AssigneeNone recorded
InventorsFalco Cornelius Marinus Jacobus Maria Van Delft, Wilhelmus Sebastianus Marcus Maria Ketelaars, Mark Kroon
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A pattern of very fine features (18) can be produced by illuminating an inorganic negative tone resist layer (16), provided on an electroplating base layer (14), by a beam (EB), which is able to cure the resist to a cured pattern according to the pattern to be formed, removing the non-illuminated portions of the resist layer and electroplating a layer (20) between the cured portions (18) of the resist layer.
A method of forming a pattern of sub-micron broad features in a metal layer, which method includes the steps of:
A method as claimed in any one of the preceding claims, characterized by the intermediate step of covering the substrate surface, which is to be provided with the pattern of features, with an insulating layer before the electroplating base layer is applied.
A method as claimed in any one of the preceding claims, characterized by the additional step of removing the illuminated portions of the resist layer after finishing the electroplating process.
Dependencies are inferred from the claim text.
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No related US applications are recorded in the indexed filing history.
Backward citations are indexed for grants only.
Processing photosensitive materials; Apparatus therefor: treatment after imagewise removal, e.g. baking
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g.…
Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor: phase modulating…
Silicon-containing compounds: macromolecular compounds containing Si-O, Si-C or Si-N bonds
Term end not estimated
The invention relates to a method of forming a pattern of sub-micron broad features in a metal layer, which method includes the steps of:
forming a resist layer, comprising a negative tone resist material, on a substrate;
illuminating selected portions of the resist layer by a beam, which is able to cure the resist to a cured pattern according to the pattern to be formed, and
In the drawings:
FIG. 1 schematically shows an embodiment of a lithographic projection apparatus, which comprises elements wherein the invention may be implemented;
FIG. 2 shows a part of an embodiment of an EUV image sensor;
The main modules of the lithographic projection apparatus schematically depicted in FIG. 1 are:
an illumination system LA/ IL for supplying a projection beam PB of EUV radiation;
a mask table MT comprising, as is known in the art, a mask holder (not shown) for holding a mask MA;