Silicon space transformer and method of manufacturing same
OwnerWarren Stuart Crippeninventor
Life of this patent
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Abstract
A space transformer and a method for making the space transformer. An electrically conductive material is placed in an inner region located in a silicon medium, the silicon medium defining both a first side and a second side at an outer region thereof. Electrical contact is established between the electrically conductive material in the inner region and both the first side and the second side of the silicon medium at the outer region to provide double-sided electrical contacts for the space transformer.
Claims17
A method of manufacturing a space transformer comprising:
- placing an electrically conductive material in an inner region located in a silicon medium, the silicon medium defining both a first side and a second side at an outer region thereof;
- and
- providing electrical contact regions between the electrically conductive material in the inner region and both the first side and the second side of the silicon medium at the outer region to provide double-sided electrical contacts for the space transformer.
A method of manufacturing a space transformer, comprising:
- depositing a layer of electrically conductive material on a first silicon layer;
- providing a predetermined contact pattern on the first silicon layer from the layer of electrically conductive material;
- depositing a second silicon layer on the contact pattern such that the contact pattern is placed in an inner region located between the first silicon layer and the second silicon layer;
- and
- providing electrical contact regions between an outer region located outside of the inner region and the layer of electrically conductive material placed in the inner region to provide double-sided electrical contacts for the space transformer.
A method of manufacturing a space transformer, comprising:
- creating a plurality of vias in a first silicon layer;
- depositing a layer of copper on the first silicon layer such some of the copper is deposited in the plurality of vias;
- providing a predetermined contact pattern on the first silicon layer from the layer of copper;
- depositing a second silicon layer on the contact pattern such that the contact pattern is placed in an inner region located between the first silicon layer and the second silicon layer;
- and
- providing electrical contact regions between an outer region located outside of the inner region and the contact pattern provided in the inner region to provide double-sided electrical contacts for the space transformer, providing electrical contact regions including etching the first silicon layer to expose a plurality of electrical contact zones of the layer of copper, each of the electrical contact zones corresponding to a location of a respective one of the plurality of vias.
A space transformer comprising:
- a silicon medium;
- and
- a predetermined contact pattern comprising electrically conductive material disposed in an inner region of the substrate and defining electrical contact zones located to provide double-sided electrical contacts for the space transformer.
A space transformer comprising:
- a first silicon layer defining a plurality of vias therein;
- a predetermined contact pattern comprising copper on the first silicon layer, at least some of the copper being disposed in the plurality of vias for defining thermal contact zones in the plurality of vias to provide double-sided electrical contacts for the space transformer;
- and
- a second silicon layer disposed on the contact pattern, the contact pattern being disposed in an inner region located between the first silicon layer and the second silicon layer.
A space transformer comprising:
- a first silicon layer;
- a second silicon layer mounted to the first silicon layer;
- and
- means disposed in an inner region located between the first silicon layer and the second silicon layer for providing double-sided electrical contacts for the space transformer.
Dependencies are inferred from the claim text.