Method of cleaning component in plasma processing chamber and method of producing semiconductor devices
AssigneeKawasaki Microelectronics, Inc.
InventorKatsunori Suzuki
Life of this patent
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Abstract
A component having small holes, such as a silicon electrode plate having gas nozzles, used in a plasma processing apparatus is cleaned by producing a cavitation zone that extends through an entire depth of the holes so that deposited layers on the inner walls of the holes formed during the use in the apparatus are removed. The cleaned component can subsequently be re-used in the apparatus, and the production cost and the consumption of natural resources are decreased.
Claims26
A method of cleaning an electrode plate used in a plasma processing apparatus, the electrode plate having a plurality of gas nozzles through which a process gas is supplied to a processing zone of the plasma processing apparatus, the gas nozzles passing through an entire thickness of the electrode plate, the method comprising:
- immersing the electrode plate in an cleaning agent;
- and
- removing deposited layers on inner walls of the gas nozzles formed when the electrode plate is used in the plasma processing apparatus, the removing including radiating ultrasonic waves toward a surface of the electrode plate having openings of the plurality of gas nozzles from an ultrasonic wave radiation surface of a horn connected to an ultrasonic vibrator, a power density of the ultrasonic waves defined by a ratio of an electric power input to the ultrasonic vibrator to an area of the ultrasonic wave radiation surface being not lower than 5 W/cm2.
A method of cleaning an electrode plate used in a plasma processing apparatus, the electrode plate having a plurality of gas nozzles through which a process gas is supplied to a processing zone of the plasma processing apparatus, the gas nozzles passing through an entire thickness of the electrode plate, the method comprising:
- immersing the electrode plate in an cleaning agent;
- and
- removing deposited layers on inner walls of the gas nozzles formed when the electrode plate is used in the plasma processing apparatus, the removing including producing a cavitation zone that extends through an entire depth of the gas nozzles.
A method of producing semiconductor devices, comprising:
- attaching an electrode plate in a plasma processing apparatus, the electrode plate having a plurality of gas nozzles through which a process gas is supplied to a processing zone of the plasma processing apparatus, the gas nozzles passing through an entire thickness of the electrode plate;
- processing a first plurality of semiconductor devices in the processing zone while forming deposited layers on inner walls of the gas nozzles;
- detaching the electrode plate from the plasma processing apparatus:
- cleaning the detached electrode plate, the cleaning comprising:
- immersing the detached electrode plate in a cleaning agent;
- and
- removing the deposited layers from inner walls of the gas nozzles, the removing including producing a cavitation zone extending through an entire depth of the gas nozzles;
- re-attaching the cleaned electrode plate to the plasma apparatus;
- and
- processing a second plurality of semiconductor devices in the plasma apparatus.
A method of cleaning a component used in a plasma processing apparatus, the component having a plurality of holes through which a process gas is supplied to a processing zone of the plasma processing apparatus, the holes passing through an entire thickness of the component, the method comprising:
- immersing the component in an cleaning agent;
- and
- removing deposited layers on inner walls of the holes formed when the component is used in the plasma processing apparatus, the removing including producing a cavitation zone that extends through an entire depth of the holes.
Dependencies are inferred from the claim text.