Aperture masks for circuit fabrication
Assignee3M Innovative Properties Company
InventorsPaul F. Baude, Patrick R. Fleming, Michael A. Haase, Tommie W. Kelley, Dawn V. Muyres, Steven Theiss
Life of this patent
Estimating the term…
Abstract
Aperture masks and deposition techniques for using aperture masks are described. In addition, techniques for creating aperture masks and other techniques for using the aperture masks are described. The various techniques can be particularly useful in creating circuit elements for electronic displays and low-cost integrated circuits such as radio frequency identification (RFID) circuits. In addition, the techniques can be advantageous in the fabrication of integrated circuits incorporating organic semiconductors, which typically are not compatible with wet processes.
Claims83
A method comprising:
- positioning an aperture mask in proximity to a deposition substrate;
- stretching the aperture mask to align the aperture mask with the deposition substrate;
- and
- depositing material through the stretched aperture mask to form a layer on the deposition substrate.
A polymeric aperture mask, the polymeric aperture mask comprising:
- a polymer, and
- a magnetic material.
A deposition system comprising:
- a polymeric aperture mask including a polymer and magnetic material;
- and
- a magnetic structure that magnetically interacts with the magnetic material to reduce sag in the polymeric aperture mask during a deposition process.
A repositionable polymeric aperture mask for use in a vapor deposition process, the polymeric aperture mask formed with a pattern of deposition apertures that define at least a portion of an integrated circuit, wherein the portion of the integrated circuit includes at least one thin film transistor, wherein the pattern has a dimension greater than approximately a centimeter and wherein at least one of the deposition apertures has a width less than approximately 1000 microns.
19 The polymeric aperture mask of claim 17, wherein the pattern has a dimension greater than approximately 25 centimeters.
The polymeric aperture mask of claim 19, wherein the pattern has a dimension greater than approximately 100 centimeters.
A method comprising:
- positioning a flexible repositionable polymeric aperture mask in proximity to a deposition substrate;
- controlling sag in the flexible aperture mask;
- and
- depositing material through the flexible aperture mask to form a layer on the deposition substrate that defines at least a portion of an integrated circuit.
A method comprising:
- ablating a polymeric film formed with a material layer on a first side of the polymeric film from a side opposite the material layer to define a pattern in the polymeric film, wherein the pattern defines deposition apertures that extend through the polymeric film;
- and
- removing the material to form a polymeric aperture mask.
A method comprising
- forming a repositionable aperture mask by ablating a polymeric film to define a pattern;
- and
- using the aperture mask in a deposition process.
A method comprising:
- forming a repositionable polymeric aperture mask;
- using the polymeric aperture mask as a pattern in an etching process to etch at least one layer of a thin film transistor.
A method comprising:
- positioning a repositionable polymeric aperture mask over a non-planar deposition substrate;
- and
- forming at least one layer of an integrated circuit on the non-planar deposition substrate by depositing material onto the non-planar deposition substrate through the polymeric aperture mask, wherein the layer of the integrated circuit includes at least a portion of a thin film transistor.
56 The method of claim 47, wherein at least one layer of the integrated circuit defines at least one feature having a width less than approximately 1000 microns.
The method of claim 56, wherein at least one layer of the integrated circuit defines at least one feature having a width less than approximately 50 microns.
A repositionable polymeric aperture mask comprising a pattern of deposition apertures that define at least a portion of an integrated circuit, wherein the pattern has a dimension greater than a centimeter, wherein at least one deposition aperture has a width less than approximately 1000 microns and wherein the portion of the integrated circuit comprises at least a portion of a thin film transistor.
A repositionable polymeric aperture mask comprising:
- a polyimide;
- and
- a pattern of deposition apertures, wherein the pattern has a dimension greater than a centimeter, and wherein at least one deposition aperture has a width less than approximately 1000 microns.
A method comprising:
- ablating a pattern in a polymeric film to create a repositionable polymeric aperture mask, wherein the pattern defines at least one deposition aperture that corresponds to an element of an integrated circuit.
A method comprising depositing material on a deposition substrate through a repositionable polymeric aperture mask to define a patterned layer of an integrated circuit, wherein the aperture mask includes a patterned area with a dimension greater than a centimeter, and wherein the patterned layer of the integrated circuit comprises at least a portion of a thin film transistor.
A method comprising:
- ablating a pattern of deposition apertures in a polymeric film to create a repositionable polymeric aperture mask for use in a deposition process for integrated circuit fabrication;
- and
- controlling the ablation to create an acceptable wall-angle for one or more of the deposition apertures.
An aperture mask comprising:
- a mask substrate formed with a pattern of deposition apertures;
- and
- distortion minimizing features in the mask substrate, wherein the distortion minimizing features are located near edges of the pattern.
Dependencies are inferred from the claim text.