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AssigneeUniversity of Surrey
InventorsKevin P. Homewood, Russell Mark Gwilliam, Guosheng Shao
Estimating the term…
An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains an array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.
An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a band structure characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and wherein a desired electronic or optoelectronic parameter of said device is obtained as a result of the modification of the band structure.
A method of making an electronic or optoelectronic device from a crystalline material including the step of modifying locally a parameter of a bandgap characteristic of said crystalline material by introducing distortions on an atomic scale in the lattice structure of said crystalline material whereby the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap.
A method of making a radiation-emissive optoelectronic semiconductor device including the steps of forming a junction having at least a region of p-type indirect bandgap semiconductor material and/or a region of n-type indirect bandgap semiconductor material, and incorporating in the junction means effective, in operation of the device, to spatially confine, and thereby promote radiative recombination of charge carriers.
A radiation-emissive optoelectronic device substantially as herein described with reference to the accompanying drawings.
A method of making a radiation emissive optoelectronic device substantially as herein described with reference to the drawings.
An injection laser substantially as herein described.
Dependencies are inferred from the claim text.