Rule-based opc evaluating method and simulation base opc model evaluating method
AssigneeSony Corporation
InventorHidetoshi Ohnuma
Life of this patent
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Abstract
A rule-based OPC evaluating method and a simulation-based OPC model evaluating method for accurately evaluating line width controllability are disclosed. Mask pattern design data about an evaluation-use mask are input to rule-based OPC to obtain correction data about the mask pattern on the evaluation-use mask. An evaluation-use wafer is fabricated based on the correction data thus acquired. Gate patterns on the evaluation-use wafer are measured for size. Based on a simulation-based OPC model having undergone process calibration, simulation data are output corresponding to all gate patterns on the evaluation-use wafer. The measured data about the evaluation-use gate patterns are compared with the simulation data, whereby the rule-based OPC is evaluated.
Claims12
A rule-based OPC evaluating method comprising the steps of:
- obtaining correction data by correcting design data about an evaluation-use mask pattern through rule-based OPC;
- forming said evaluation-use mask pattern into an evaluation-use mask based on said correction data;
- forming evaluation-use gate patterns into an evaluation-use wafer using said evaluation-use mask;
- obtaining measured data about said evaluation-use gate patterns by measuring lengths of said evaluation-use gate patterns formed on said evaluation-use wafer;
- creating a simulation-based OPC model through execution of process calibration based both on test pattern design data about a test-use mask for process calibration purposes, and on measured data about gate patterns of a test-use wafer fabricated using said test-use mask;
- obtaining simulation data by simulating said design data about said evaluation-use mask pattern using said simulation-based OPC model;
- and
- evaluating said rule-based OPC by comparing said measured data about said evaluation-use gate patterns with said simulation data.
A simulation-based OPC model evaluating method comprising:
- obtaining correction data by correcting design data about an evaluation-use mask pattern using a first simulation-based OPC model;
- forming said evaluation-use mask pattern into an evaluation-use mask based on said correction data;
- forming evaluation-use gate patterns into an evaluation-use wafer using said evaluation-use mask;
- obtaining measured data about said evaluation-use gate patterns by measuring lengths of said evaluation-use gate patterns formed on said evaluation-use wafer;
- creating a second simulation-based OPC model through execution of process calibration based both on test pattern design data about a test-use mask for process calibration purposes, and on measured data about gate patterns of a test-use wafer fabricated using said test-use mask;
- obtaining simulation data by simulating said design data about said evaluation-use mask pattern using said second simulation-based OPC model;
- and
- evaluating said first simulation-based OPC model by comparing said measured data about said evaluation-use gate patterns with said simulation data.
Dependencies are inferred from the claim text.