Resin useful for resist, resist composition and pattern forming process using the same
AssigneeKabushiki Kaisha Toshiba
InventorsTakeshi Okino, Koji Asakawa, Naomi Shida, Toru Ushirogouchi, Satoshi Saito
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Abstract
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
Claims29
A process for producing a semiconductor device,
- comprising the steps of:
- forming, on an etching film formed on a substrate, a film containing a resist composition which comprises a resist resin obtained by homopolymerizing at least one monomer selected from monomers represented by the general formulas (I-1) and (I-2):
- 80
- wherein R is acryloyl or methacryloyl group, R11 and R12 are hydrogen atom or a monovalent alkyl group, and R13 is OH group, ═O group, COOH group or COOR14 group (R4 is a monovalent organic group), or by copolymerizing the monomer(s) and any other vinyl monomer, and a photo acid generator,
- subjecting the film coated onto the substrate to pattern-wise exposure,
- developing the film exposed to light, thereby forming a patterned photomask, and
- etching an etching film by dry etching, using the photomask as a mask.
A resist composition comprising:
- a resist resin obtained by copolymerizing at least one monomer selected from monomers represented by the general formulas (I-1) and (I-2):
- 81
- and at least one monomer selected from monomers represented by the general formulas (I-3), (I-4), (I-5), (I-6) and (I-7):
- 82
- wherein R31 is hydrogen atom, or at least one group selected from the group consisting of OH group, OR14 group (R14 is a monovalent organic group) and ═O group, R32 is hydrogen atom or a monovalent organic group, and R41 is vinyl, acryloyl or methacryloyl group;
- and
- a photo acid generator.
A resist resin having a bridged-bond-containing aliphatic ring, at least two oxygen-containing polar groups being combined with a tertiary carbon atom of the bridged-bond-containing aliphatic ring.
A resist composition comprising:
- a resin having a bridged-bond-containing aliphatic ring, at least two oxygen-containing polar groups being combined with a tertiary carbon atom of the bridged-bond-containing aliphatic ring, and
- a photo acid generator.
A resist composition comprising:
- a resin comprising a polymer or condensate of a monomer having a bridged-bond-containing aliphatic ring, at least two oxygen-containing polar groups being combined with a tertiary carbon atom of the bridged-bond-containing aliphatic ring, and
- a photo acid generator.
A pattern forming process comprising the steps of:
- forming, on a substrate, a film containing a resist composition which comprises a resin having a bridged-bond-containing aliphatic ring, at least two oxygen-containing polar groups being combined with a tertiary carbon atom of the bridged-bond-containing aliphatic ring, and a photo acid generator,
- subjecting the film to pattern-wise exposure, and
- developing the film exposed to light.
A process for producing a semiconductor device, comprising the steps of:
- forming, on an etching film on a substrate, a film containing a resist composition which comprises a resin having a bridged-bond-containing aliphatic ring, at least two oxygen-containing polar groups being combined with a tertiary carbon atom of the bridged-bond-containing aliphatic ring, and a photo acid generator,
- subjecting the film coated onto the substrate to pattern-wise exposure,
- developing the film exposed to light, thereby forming a patterned photomask, and
- etching an etching film by dry etching, using the photomask as a mask.
A resist composition comprising a resist resin having a bridged-bond-containing aliphatic ring composed of at least two rings selected from the group consisting of 5-membered rings, 6-membered rings and 7-membered rings, and a photo acid generator, wherein at least one carbon constituting the bridged-bond-containing aliphatic ring contained in the resin is combined with oxygen through double bond.
A pattern forming process comprising the steps of:
- forming, on a substrate, a film containing a resist composition which comprises a resist resin having a bridged-bond-containing aliphatic ring composed of at least two rings selected from the group consisting of 5-membered rings, 6-membered rings and 7-membered rings, and a photo acid generator, wherein at least one carbon constituting the bridged-bond-containing aliphatic ring contained in the resin is combined with oxygen through double bond,
- subjecting the film to pattern-wise exposure, and
- developing the film exposed to light.
Dependencies are inferred from the claim text.