Target for transparent electroconductive film, transparent electroconductive material, transparent electroconductive glass and transparent electroconductive film

A sintered product that comprises constituent components of indium oxide, tin oxide and zinc oxide in the following atomic ratios:

• In/(In+Sn+Zn)=0.50 to 0.75, Sn/(In+Sn+Zn)=0.20 to 0.45, Zn/(In+Sn+Zn)=0.03 to 0.30,
• and from 0.5 to 10 atomic %, relative to the total of all metal atoms therein, of an oxide of a positive tetra-valent or higher poly-valent metal, and contains a hexagonal layer compound of In2O3.(ZnO)m with m indicating an integer of from 2 to 20, and a spinel-structured compound of Zn2SnO4.

Transparent electroconductive glass prepared by coating the surface of glass with an amorphous transparent electroconductive film that comprises constituent components of indium oxide, tin oxide and zinc oxide in the following atomic ratios:

• In/(In+Sn+Zn)=0.50 to 0.75, Sn/(In+Sn+Zn)=0.20 to 0.45, Zn/(In+Sn+Zn)=0.03 to 0.30,
• and contains from 0.5 to 10 atomic %, relative to the total of all metal atoms therein, of an oxide of a positive tetra-valent or higher poly-valent metal.

A transparent electroconductive film prepared by coating the surface of a transparent resin film with an amorphous transparent electroconductive layer that comprises constituent components of indium oxide, tin oxide and zinc oxide in the following atomic ratios:

• In/(In+Sn+Zn)=0.50 to 0.75, Sn/(In+Sn+Zn)=0.20 to 0.45, Zn/(In+Sn+Zn)=0.03 to 0.30,
• and contains from 0.5 to 10 atomic %, relative to the total of all metal atoms therein, of an oxide of a positive tetra-valent or higher poly-valent metal.

A sintered product of a composition that comprises indium oxide, or indium oxide and zinc oxide and/or tin oxide in the following atomic ratios:

• In/(In+Zn+Sn)=0.80 to 1.00, Zn/(In+Zn+Sn)=0.00 to 0.20, Sn/(In+Zn+Sn)=0.00 to 0.20,
• and contains from 0.5 to 10 atomic %, relative to the total of all metal atoms therein, of a metal oxide selected from ruthenium oxide, molybdenum oxide and vanadium oxide.

A sintered product of a composition that comprises indium oxide and zinc oxide, or tin oxide in addition to the former two oxides in the following atomic ratios:

• In/(In+Zn+Sn)=0.80 to 1.00, Zn/(In+Zn+Sn)=0.05 to 0.20, Sn/(In+Zn+Sn)=0.00 to 0.20,
• and contains from 0.5 to 10 atomic %, relative to the total of all metal atoms therein, of a metal oxide selected from ruthenium oxide, molybdenum oxide and vanadium oxide.

A sintered product of a composition that comprises indium oxide, zinc oxide and tin oxide in the following atomic ratios:

• In/(In+Zn+Sn)=0.80 to 1.00, Zn/(In+Zn+Sn)=0.05 to 0.20, Sn/(In+Zn+Sn)=0.02 to 0.20,
• and contains from 0.5 to 10 atomic %, relative to the total of all metal atoms therein, of a metal oxide selected from ruthenium oxide, molybdenum oxide and vanadium oxide.

Transparent electroconductive glass prepared by coating the surface of glass with a transparent electroconductive film of a composition that comprises indium oxide, zinc oxide and tin oxide in the following atomic ratios:

• In/(In+Zn+Sn)=0.80 to 1.00, Zn/(In+Zn+Sn)=0.00 to 0.20, Sn/(In+Zn+Sn)=0.00 to 0.20,
• and contains from 0.5 to 10 atomic %, relative to the total of all metal atoms therein, of a metal oxide selected from ruthenium oxide, molybdenum oxide and vanadium oxide.

A transparent electroconductive film prepared by coating the surface of a transparent resin film with a transparent electroconductive layer that comprises indium oxide, zinc oxide and tin oxide in the following atomic ratios:

• In/(In+Zn+Sn)=0.80 to 1.00, Sn/(In+Zn+Sn)=0.00 to 0.20, Zn/(In+Zn+Sn)=0.00 to 0.20,
• and contains from 0.5 to 10 atomic %, relative to the total of all metal atoms therein, of a metal oxide selected from ruthenium oxide, molybdenum oxide and vanadium oxide.

A transparent electroconductive material of a composition that comprises one or more metal oxides selected from indium oxide, zinc oxide and tin oxide and contains from 0.5 to 20 atomic %, relative to the total of all metal atoms therein, of one or more metal oxides selected from iridium oxide, rhenium oxide and palladium oxide.

A transparent electroconductive material of a composition that comprises metal oxide(s) of indium oxide, zinc oxide and tin oxide in the following atomic ratios:

• In/(In+Zn+Sn)=0.00 to 1.00, Zn/(In+Zn+Sn)=0.00 to 0.25, Sn/(In+Zn+Sn)=0.00 to 1.00,
• and contains from 0.5 to 20 atomic %, relative to the total of all metal atoms therein, of one or more metal oxides selected from iridium oxide, rhenium oxide and palladium oxide.

A transparent electroconductive material of a composition that comprises metal oxides of indium oxide, zinc oxide and tin oxide in the following atomic ratios:

• In/(In+Zn+Sn)=0.50 to 1.00, Zn/(In+Zn+Sn)=0.05 to 0.25, Sn/(In+Zn+Sn)=0.00 to 0.50,
• and contains from 0.5 to 20 atomic %, relative to the total of all metal atoms therein, of one or more metal oxides selected from iridium oxide, rhenium oxide and palladium oxide.

A transparent electroconductive material of a composition that comprises metal oxides of indium oxide, zinc oxide and tin oxide in the following atomic ratios:

• In/(In+Zn+Sn)=0.75 to 0.95, Zn/(In+Zn+Sn)=0.05 to 0.20, Sn/(In+Zn+Sn)=0.00 to 0.20,
• and contains from 0.5 to 20 atomic %, relative to the total of all metal atoms therein, of one or more metal oxides selected from iridium oxide, rhenium oxide and palladium oxide.

Transparent electroconductive glass prepared by coating the surface of glass with a transparent electroconductive film of a composition that comprises one or more metal oxides selected from indium oxide, zinc oxide and tin oxide and contains from 0.5 to 20 atomic %, relative to the total of all metal atoms therein, of one or more metal oxides selected from iridium oxide, rhenium oxide and palladium oxide.

A transparent electroconductive film prepared by coating the surface of a transparent resin film with a transparent electroconductive layer that comprises one or more metal oxides selected from indium oxide, zinc oxide and tin oxide and contains from 0.5 to 20 atomic %, relative to the total of all metal atoms therein, of one or more metal oxides selected from iridium oxide, rhenium oxide and palladium oxide.

A transparent electroconductive material of a composition that comprises metal oxide(s) of tin oxide, indium oxide and zinc oxide in the following atomic ratios:

• Sn/(Sn+In+Zn)=0.55 to 1.00, In/(Sn+In+Zn)=0.00 to 0.45, Zn/(Sn+In+Zn)=0.00 to 0.25,
• and contains from 0.5 to 10 atomic %, relative to the total of all metal atoms therein, of one or more metal oxides selected from vanadium oxide, molybdenum oxide and ruthenium oxide.

Transparent electroconductive glass prepared by forming, on the surface of a glass substrate, a transparent electroconductive film of a composition that comprises metal oxide(s) of tin oxide, indium oxide and zinc oxide in the following atomic ratios:

• Sn/(Sn+In+Zn)=0.55 to 1.00, In/(Sn+In+Zn)=0.00 to 0.45, Zn/(Sn+In+Zn)=0.00 to 0.25,
• and contains from 0.5 to 10 atomic %, relative to the total of all metal atoms therein, of one or more metal oxides selected from vanadium oxide, molybdenum oxide and ruthenium oxide.

A transparent electroconductive film prepared by forming, on the surface of a transparent resin film, a transparent electroconductive layer of a composition that comprises metal oxide(s) of tin oxide, indium oxide and zinc oxide in the following atomic ratios:

• Sn/(Sn+In+Zn)=0.55 to 1.00, In/(Sn+In+Zn)=0.00 to 0.45, Zn/(Sn+In+Zn)=0.00 to 0.25,
• and contains from 0.5 to 10 atomic %, relative to the total of all metal atoms therein, of one or more metal oxides selected from vanadium oxide, molybdenum oxide and ruthenium oxide.