Oxidative annealing method for forming etched spin-on-glass (SOG) planarizing layer with uniform etch profile

Abstract

Within a method for forming a spin-on-glass (SOG) layer there is first provided a substrate. There is then formed over the substrate a spin-oil-glass (SOG) planarizing layer while employing a silsesquioxane spin-on-glass (SOG) planarizing material. There is then annealed thermally the spin-on-glass (SOG) planarizing layer while employing a first thermal annealing method employing a first gaseous atmosphere comprising a non-oxidizing gas to form a cured spin-on-glass (SOG) planarizing layer. Finally, there is then annealed thermally the cured spin-on-glass (SOG) planarizing layer while employing a second thermal annealing method employing a second gaseous atmosphere comprising an oxidizing gas to form firm the cured spin-on-glass (SOG) planarizing layer an oxidized cured spin-on-glass (SOG) planarizing layer. The oxidized cured spin-on-glass (SOG) planarizing layer when subsequently etched exhibits a more uniform etch profile, and the oxidized cured spin-on-glass (SOG) planarizing layer also exhibits enhanced adhesion to additional layers formed thereupon.

Dependencies are inferred from the claim text.