Method for removing contamination and method for fabricating semiconductor device
AssigneeNEC Electronics Corporation
InventorsHidemitsu Aoki, Kaori Watanabe
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Abstract
A method for removing contamination on a semiconductor substrate is disclosed. The contamination contains at least one element belonging to one of 3A group, 3B group and 4A group of long-period form of periodic system of elements. The method comprises first and second process steps. The first process is wet processing the semiconductor substrate by first remover liquid that contains one of acid and alkali. The second process is wet processing the semiconductor substrate by second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.
Claims21
A method for removing contamination on a semiconductor substrate, the contamination containing at least one element belonging to one of 3A group, 3B group and 4A group of long-period form of periodic system of elements, the method comprising:
- a first process of wet processing the semiconductor substrate by first remover liquid that contains one of acid and alkali;
- and
- a second process of wet processing the semiconductor substrate by second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.
A method for fabricating a semiconductor device, comprising:
- a first process of wet processing a semiconductor substrate by first remover liquid that contains one of acid and alkali after forming a film on a device forming surface of the semiconductor substrate, the film containing at least one element belonging to one of 3A group, 3B group and 4A group of long-period form of periodic system of elements;
- and
- a second process of wet processing the semiconductor substrate, which has been wet processed in the first process, by second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.
Dependencies are inferred from the claim text.