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US 2003/0148608 A1Published application
Method of manufacturing integrated circuit
AssigneeRenesas Technology Corp.
InventorsNorio Hasegawa, Joji Okada, Toshihiko Tanaka, Kazutaka Mori, Ko Miyazaki
Life of this patent
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Abstract
In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1 is used which is provided partially with light shielding patterns 3a formed of a resist film, in addition to light shielding patterns formed of a metal.
Claims10
A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) radiating exposure light from a second main surface side of a mask substrate, the mask substrate having on a first main surface thereof a light shielding portion formed of a resist film and a light shielding portion formed of a metal, both light shielding portions constituting integrated circuit patterns on a photomask;
- and
- (b) subjecting the exposure light having passed through the mask substrate to a reducing projection by a projection optical system, thereby causing the integrated circuit patterns to be focused onto a photoresist film formed on a main surface of a semiconductor wafer.
Dependencies are inferred from the claim text.