Method of forming an oxidation-resistant TiSiN film
AssigneeTokyo Electron Limited
InventorsYukihiro Shimogaki, Yumiko Kawano
Life of this patent
Estimating the term…
Abstract
A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.
Claims17
A method of forming a conductive film containing Ti, Si and N on a substrate by supplying a gaseous source of Ti, a gaseous source of Si and a gaseous source of N, comprising:
- a first step of supplying said gaseous source of Ti, said gaseous source of Si and said gaseous source of N to a surface of said substrate simultaneously to grow said conductive film;
- and
- a second step of supplying said gaseous source of Ti, said gaseous source of Si and said gaseous source of N to said surface of said substrate in a state that a flow rate of said gaseous source of Ti is reduced to grow said conductive film further,
- wherein said first step and said second step are conducted alternately.
A method of forming a conductive film containing Ti, Si and N on a substrate by supplying a gaseous source of Ti, a gaseous source of Si and a gaseous source of N, comprising the step of:
- supplying said gaseous source of Ti, said gaseous source of Si and said gaseous source of N to a surface of said substrate simultaneously,
- wherein a partial pressure of said Ti gaseous source is increased and decreased repeatedly and alternately.
A method of fabricating a semiconductor device, said semiconductor device comprising a substrate carrying an active device, an insulation film provided on said substrate so as to cover said active layer, a contact plug formed in said insulation film in contact with said active layer electrically, and a capacitor provided on said insulation film in electrical contact with said contact plug, said method comprising the steps of:
- forming a barrier containing Ti, Si and N layer on said insulation film in electrical contact with said contact plug;
- forming a lower electrode layer on said barrier layer;
- depositing a high-dielectric film on said lower electrode layer;
- annealing said high-dielectric film in an oxygen atmosphere;
- and
- forming, after said annealing process, an upper electrode on said lower electrode,
- said step of forming said barrier layer comprising:
- a first step of growing said barrier on said insulation film by supplying a gaseous source of Ti, a gaseous source of Si and a gaseous source of N simultaneously;
- and
- a second step of growing said barrier layer further by supplying said gaseous source of Ti, said gaseous source of Si and said gaseous source of N in a state that a flow rate of said gaseous source of Ti is reduced,
- wherein said first step and said second step are conducted alternately.
A conductive film containing Ti, Si and N,
- said conductive film containing Ti with a concentration profile changing periodically in a thickness direction,
- said conductive film containing Si with a concentration profile changing periodically in said thickness direction,
- wherein said concentration profile of Ti and said concentration profile of Si determine a concentration of Ti and a concentration of Si in said conductive film such that said concentration of Ti is increased where said concentration of Si is decreased and such that said concentration of Ti is decreased where said concentration of Si is increased.
A film forming apparatus, comprising:
- a reactor evacuated from an evacuation port, said reactor accommodating therein a stage;
- an evacuation system connected to said evacuation port;
- a first source supply line supplying a first gaseous source containing Ti to said reactor via a switching valve;
- a second source supply line supplying a second gaseous source containing Si to said reactor;
- a third source supply line supplying a third gaseous source containing N to said reactor;
- a pre-flow line provided between said switching valve and said evacuation system for bypassing said first gaseous source to said evacuation system;
- and
- a controller controlling said switching valve,
- said controller interrupts supply of said first gaseous source to said reactor intermittently and repeatedly.
Dependencies are inferred from the claim text.