Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrate

A method of manufacturing a semiconductor integrated circuit device having at least one memory cell composed of a cell-selecting MISFET formed in a major surface of a semiconductor substrate and a data-storing capacitive element provided above the cell-selecting MISFET, said method comprising the steps of:

• (a) forming a cell-selecting MISFET on in a major surface of a semiconductor substrate, forming a first insulating film on the cell-selecting MISFET, and forming, in a through hole made in the first insulating film, a first conductive film electrically connected to a source or drain of the cell-selecting MISFET;
• (b) forming a second insulating film on the first insulating film and making a trench in the second insulating film;
• (c) forming a second conductive film in the trench and on the second insulating film, said second conductive film extending through the trench and electrically connected to the first conductive film;
• (d) covering the second conductive film with a photoresist film and applying exposure light to the photoresist film, thereby exposing that part of the photoresist film which lies outside the trench to light;
• (e) removing that part of the photoresist film which has been exposed to light, thereby leaving, in the trench, that part of the photoresist film which is not exposed to light;
• (f) removing that part of the second conductive film which is not covered with the photoresist film, thereby leaving the other part of the second conductive film in the trench;
• and
• (g) removing that part of the photoresist film that lies in the trench, and then forming a third insulating film in the trench and on the second insulating film and forming a third conductive film on the third insulating film, thereby forming a data-storing capacitlve element composed of a first electrode, a capacitive insulating film and a second electrode which are made of the second conductive film, third insulating film and third conductive film, respectively.

A method of manufacturing a semiconductor integrated circuit device having at least one memory cell composed of a cell-selecting MISFET formed in a major surface of a semiconductor substrate and a data-storing capacitive element provided above the cell-selecting MISFET, said method comprising the steps of:

• (a) forming a cell-selecting MISFET on the major surface of the semiconductor substrate, forming a first insulating film on the cell-selecting MISFET, and forming, in a through hole made in the first insulating film, a first. conductive film electrically connected to a source or drain of the cell-selecting MISFET;
• (b) forming a second insulating film on the first insulating film and making a trench in the second insulating film;
• (c) forming, in the trench and on the second insulating film, a second conductive film made of amorphous silicon and electrically connected to the first conductive film via the trench;
• (d) covering the second conductive film with a photoresist film and applying exposure light to the photoresist film, thereby exposing that part of the photoresist film which lies outside the trench to light;
• (e) removing that part of the photoresist film which has been exposed to light, thereby leaving, in the trench. that part of the photoresist film which is not exposed to light;
• (f) removing that part of the second conductive film which is not covered with the photoresist film, thereby leaving the second conductive film in the trench;
• (g) removing that part of the photoresist film which lies in the trench and forming depressions and projections in and on the surface of the second conductive film exposed in the trench;
• (h) heat-treating the second conductive film, converting the same to a polycrystalline film;
• and
• (i) forming a third insulating film in the trench and on the second insulating film and forming a third conductive film on the third insulating film, thereby forming a data-storing capacitive element composed of a first electrode, a capacitive insulating film and a second electrode which are made of the second conductive film, third insulating film and third conductive film, respectively.

A method of manufacturing a semiconductor integrated circuit device having at least one memory cell composed of a cell-selecting MISFET formed in a major surface of a semiconductor substrate and a data-storing capacitive element provided above the cell-selecting MISFET, said method comprising the steps of:

• (a) forming a cell-selecting MISFET on a major surface of a semiconductor substrate, forming a first insulating film on the cell-selecting MISFET, and forming, in a through hole made in the first insulating film, a first conductive film electrically connected to a source or drain of the cell-selecting MISFET;
• (b) forming a second insulating film on the first insulating film and then making a trench in the second insulating film;
• (c) forming, in the trench and on the second insulating film, a second conductive film made of amorphous silicon and electrically connected to the first conductive film via the trench;
• (d) forming depressions and projections in and on the surface of the second conductive film;
• (e) heat-treating the second conductive film, converting the same to a polycrystalline film;
• and
• (f) covering the second conductive film with a photoresist film and applying exposure light to the photoresist film, thereby exposing that part of the photoresist film which lies outside the trench to light;
• (g) removing that part of the photoresist film which has been exposed to light, thereby leaving that part of the photoresist film which lies in the trench;
• (h) removing that part of the second conductive film which is not covered with the photoresist film, thereby leaving the second conductive film in the trench;
• (i) removing that part of the photoresist film which lies in the trench, then forming a third insulating film in the trench and on the second insulating film and forming a third conductive film on the third insulating film, thereby forming a data-storing capacitive element composed of a first electrode, a capacitive insulating film and a second electrode which are made of the second conductive film, third insulating film and third conductive film, respectively.

A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:

• (a) forming a first conductive film on a major surface of a semiconductor substrate, forming a first insulating film on the first conductive film and then making a through hole in the first insulating film;
• (b) forming a photoresist film in the through hole and on the first insulating film, and then exposing to light that part of the photoresist film which lies in the through hole and that part of the part of the photoresist film which lies on a wire-forming region;
• (c) removing that part of the photoresist film which has been exposed to light, thereby leaving the unexposed parts of the photoresist film which lie on a part of the first insulating film and in the through hole;
• (d) etching the first insulating film by using the photoresist film as a mask, thereby making a wire trench in the first insulating film;
• (e) removing the photoresist film and forming a second conductive film, on the first insulating film and in the wire trench and through hole, said second conductive film lying in the through hole and electrically connected to the first conductive film via the through hole;
• and
• (f) removing that part of the second conductive film which lies on the first insulating film by means of chemical and mechanical polishing, thereby forming a buried wire made of the second conductive film in the wire trench and through hole.

A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:

• (a) forming a first conductive film on a major surface of a semiconductor substrate, forming a first insulating film on the first conductive film and then patterning the first insulating film and first conductive film, thereby forming a gate electrode made of the first conductive film and covered with the first insulating film;
• (b) forming semiconductor regions in two parts of the semiconductor substrate lie at both sides of the gate electrode;
• (c) forming a second insulating film on the semiconductor substrate, covering the gate electrode formed on the semiconductor substrate and then forming a third insulating film on the second insulating film, said third insulating film having an etching rate different from that of the second insulating film;
• (d) etching the third insulating film by using a first photoresist film as a mask, thereby making a first trench reaching the second insulating film provided on the semiconductor region and making a second trench reaching the second insulating film provided on the gate electrode;
• (e) removing the first photoresist film and forming a second photoresist film in the first and second trenches and on the third insulating film;
• (f) applying exposure light to the second photoresist film, thereby exposing to light those parts of the second photoresist film which lie in the second trench and on the third insulating film, and removing those parts of the second resist film which have been exposed to light, thereby leaving an unexposed part of the second photoresist film in the first trench;
• (g) etching a part of the second insulating film and a part of the first insulating film lying beneath the second insulating film, by using the second photoresist film left in the first trench as a mask;
• and
• (h) removing the second photoresist film and etching the second insulating film lying in the first trench and the first insulating film lying in the second trench, thereby making a first contact hole exposing the semiconductor region and a second contact hole exposing the gate electrode.

A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:

• (a) forming a trench in a first insulating film provided on a major surface of a semiconductor substrate and forming a silicon layer in the trench and on the first insulating film;
• (b) forming a second insulating film on the silicon layer laying in the trench and removing that part of the silicon layer which lies outside the trench;
• (c) removing that part of the second insulating film which lies in the trench and forming depressions and projections in and on the silicon layer;
• and
• (d) forming a dielectric film on the silicon having the depressions and projections in and on the surface, and forming a conductive film on the dielectric film.

A method of manufacturing a semiconductor integrate circuit, comprising the steps of:

• (a) making a trench in a first insulating film provided on a major surface of a semiconductor substrate and then forming a conductive layer in the trench and on the first insulating film;
• (b) forming a photoresist film on the conductive layer and applying exposure light to the photoresist film, thereby exposing to light the entire photoresist film which lies on the photoresist film and a part of the photoresist film which lies in the trench;
• (c) developing the photoresist film, thereby removing that part of the photoresist film which has been entirely exposed to light and leaving that unexposed part of the photoresist film which lies in the trench;
• and
• (d) removing that part of the conductive layer which is not covered with the photoresist film.

A method of manufacturing a semiconductor integrate circuit, comprising the steps of:

• (a) forming a silicon oxide film on a major surface of a semiconductor substrate and making a trench in the silicon oxide film;
• (b) forming a first conductive film in the trench and on the silicon oxide film;
• (c) covering the first conductive film with a photoresist film and applying exposure light to the photoresist film, thereby exposing to light that part of the photoresist film which lies outside the trench;
• (d) developing that part of the photoresist film which has been exposed to light, thereby leaving an unexposed part of the photoresist film in the trench;
• (e) removing that part of the first conductive film which lies on the silicon oxide film, by means of etching using the photoresist film as a mask;
• and
• (f) removing that part of the photoresist film which lies in the trench, thereby leaving that part of the first conductive film which lies in the trench.