Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications
AssigneeThe Regents of the University of California
InventorsKing-Ning Tu, Ya-Hong Xie, Chang-Ching Yeh
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Abstract
Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications are used to fabricate two structures: (1) a first structure includes porous Si (silicon) regions extending throughout the thickness of an Si substrate that allows for the subsequent formation of metallized posts and metallized moats in the porous regions; and (2) a second structure includes staggered deep V-grooves or trenches etched into an Si substrate, or some other semiconductor substrate, from the front and/or the back of the substrate, wherein these V-grooves and trenches are filled or coated with metal to form the metallized moats.
Claims25
A method of fabricating highly conductive regions in semiconductor substrates for radio frequency applications, comprising:
- forming one or more porous Si (silicon) regions on a Si substrate by anodization;
- and
- depositing one or more metals into the porous Si regions.
A method of fabricating highly conductive regions in semiconductor substrates for radio frequency applications, comprising:
- creating a moat on a surface of a Si (silicon) substrate using standard lithography techniques, followed by an anisotropic wet etching;
- and
- depositing a multilayer metallic thin film into the moat.
A structure for incorporating highly conductive metallic regions into a semiconductor substrate, comprising:
- a Si (silicon) substrate having one or more metallized posts, formed from metallized, localized porous Si regions, that provide low impedance paths to ground.
A structure for incorporating highly conductive metallic regions into a semiconductor substrate, comprising:
- a Si (silicon) substrate divided into a noisy circuit area and a noise sensitive circuit area, wherein the noisy circuit area and a noise sensitive circuit area are separated by a metallized moat formed from metallized porous Si regions.
A structure for incorporating highly conductive metallic regions into a semiconductor substrate, comprising:
- a Si (silicon) substrate divided into a noisy circuit area and a noise sensitive circuit area, wherein the noisy circuit area and a noise sensitive circuit area are separated by a metallized moat formed by one or more deep V-grooves etched into the Si substrate, from both the front and the back of the Si substrate, wherein the V-grooves are filled with metal.
A structure for incorporating highly conductive metallic regions into a semiconductor substrate, comprising:
- a Si (silicon) substrate divided into a noisy circuit area and a noise sensitive circuit area, wherein the noisy circuit area and a noise sensitive circuit area are separated by a metallized moat formed by one or more deep trenches etched into one side of the Si substrate, wherein the trench is filled with metal.
Dependencies are inferred from the claim text.