Stacked die in die BGA package
AssigneeMicron Technology, Inc.
InventorsHock Chuan Tan, Thiam Chye Lim, Victor Cher Khng Tan, Chee Peng Neo, Michael Kian Shing Tan, Beng Chye Chew, Cheng Poh Pour
Life of this patent
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Abstract
Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.
Claims111
A stacked die assembly, comprising:
- at least two semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- a first die disposed on the first surface of the substrate, and comprising a first surface having a plurality of bond pads located thereon, a second surface, and a first bonding element connecting the bond pads to the terminal pads on the substrate;
- and
- a second die comprising a first surface, a second surface, and a perimeter;
- the first surface having a plurality of bond pads located thereon;
- the second surface comprising a recessed edge portion along the perimeter of the die;
- the second die disposed on the first surface of the first die with the bond pads on the first die positioned within the recessed edge portion;
- the recessed edge portion having a height sufficient for clearance of the first bonding element extending from the bond pads of the first die.
A stacked die assembly, comprising:
- at least two semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- a first die disposed on the first surface of the substrate;
- the first die comprising an active surface having a plurality of bond pads located thereon, an opposing inactive surface, and a first bonding element connecting the bond pads of the first die to the terminal pads on the substrate;
- and
- a second die comprising an active surface, an opposing inactive surface, and a perimeter;
- the active surface having a plurality of bond pads located thereon;
- the inactive surface having a recessed edge portion along the perimeter of the die;
- the second die disposed on the active surface of the first die with the recessed edge portion providing an opening over the bond pads of the first die, the opening sufficient for passage of the first bonding element therethrough.
A stacked die assembly, comprising:
- at least two semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a surface having terminal pads located thereon;
- a first die disposed on said surface of the substrate;
- the first die comprising a first surface having a plurality of bond pads located thereon, a second surface, and a first bonding element connecting the bond pads of the first die to the terminal pads on the substrate;
- and
- a second die comprising a first surface, an opposing second surface, and a perimeter;
- the first surface having a plurality of bond pads located thereon;
- the second surface having a thickness removed along the perimeter of the die to provide a recessed edge portion;
- the second die disposed on the first surface of the first die with the bond pads of the first die located within the recessed edge portion;
- the recessed edge portion having a sufficient height for clearance of the first bonding element extending from the bond pads on the first die.
A stacked die assembly, comprising:
- at least two semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a surface having a plurality of terminal pads located thereon;
- a first die disposed on said surface of the substrate;
- the first die comprising a first side having a plurality of bond pads located thereon, an opposing second side, and a first bonding element connecting the bond pads of the first die to the terminal pads on the substrate;
- and
- a second die comprising a first side, an opposing second side, and a perimeter;
- the first side having a plurality of bond pads located thereon;
- the second side comprising a recessed edge portion along the perimeter of the die;
- the second die disposed on the first side of the first die with the bond pads of the first die located within the recessed edge portion of the second die, the recessed edge portion having a height sufficient for passage of the first bonding element from the bond pads of the first die therethrough.
A stacked die assembly, comprising:
- at least two semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having a plurality of terminal pads located thereon, and a second surface;
- a first die disposed on the first surface of the substrate, and comprising a first surface and a second surface having a recess formed therein;
- and
- a second die at least partially disposed within the recess of the first die.
A stacked die assembly, comprising:
- at least two semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having a plurality of terminal pads located thereon, and a second surface;
- a first die disposed on the first surface of the substrate through a flip chip attachment, and comprising a first surface and a second surface comprising a recess;
- and
- a second die at least partially disposed within the recess of the first die.
A stacked die assembly, comprising:
- at least two semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having a plurality of terminal pads located thereon, and a second surface;
- a first die disposed on the first surface of the substrate through a flip chip attachment, and comprising a first surface and a second surface comprising a recess;
- and
- a second die at least partially disposed within the recess of the first die;
- the second die comprising a first side having a plurality of bond pads located thereon;
- and an opposing second side disposed on the first die.
A stacked die assembly, comprising:
- a plurality of semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- a first die disposed on the first surface of the substrate, and comprising a first surface and a second surface having a recess formed therein;
- and
- a second die at least partially disposed in the recess of the first die;
- and
- a third die disposed on the second die.
A stacked die assembly, comprising:
- a plurality of semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- a first die disposed on the first surface of the substrate, and comprising a first surface and a second surface having a recess formed therein;
- and
- a second die at least partially disposed in the recess of the first die, and comprising a first surface having a plurality of bond pads located thereon, an opposing second surface disposed on the first die, and a bonding element connecting the bond pads of the second die to the terminal pads on the substrate;
- and
- a third die comprising a first surface, an opposing second surface, and a perimeter;
- the first surface having a plurality of bond pads located thereon;
- and the second surface comprising a recessed edge portion along the perimeter;
- the second surface of the third die disposed on the first surface of the second die whereby the recessed edge portion provides sufficient clearance for the first bonding element extending from the bond pads of the second die.
A stacked die assembly, comprising:
- a plurality of semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- a first die comprising a first surface disposed on the first surface of the substrate in a flip chip attachment, and a second surface having a recess, the recess having a surface;
- and
- a second die at least partially disposed in the recess of the first die, and comprising a first surface having a plurality of bond pads located thereon, an opposing second surface disposed on the surface of the recess, and a first bonding element connecting the bond pads of the second die to the terminal pads on the substrate;
- and
- a third die comprising a first surface, an opposing second surface, and a perimeter;
- the first surface having a plurality of bond pads located thereon;
- and the second surface comprising a recessed edge portion along the perimeter;
- the second surface disposed on the first surface of the second die whereby the recessed edge portion provides sufficient clearance for the first bonding element extending from the bond pads of the second die.
A stacked die assembly, comprising:
- at least two semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- a first die disposed on the first surface of the substrate;
- the first die comprising a first surface having a plurality of bond pads located thereon, and an opposing second surface having a recess formed therein;
- the first die attached to the substrate by an adhesive element disposed within the recess;
- and a first bonding element connecting the bond pads of the first die to the terminal pads on the substrate;
- and
- a second die disposed on the first surface of the first die.
A stacked die assembly, comprising:
- at least two semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- a first die disposed on the first surface of the substrate;
- the first die comprising a first surface having a plurality of bond pads located thereon, and an opposing second surface having a recess formed therein;
- the first die attached to the substrate by an adhesive element disposed within the recess;
- and a first bonding element connecting the bond pads of the first die to the terminal pads on the substrate;
- and
- a second die comprising a first surface, an opposing second surface, and a perimeter;
- the first surface having a plurality of bond pads located thereon;
- the second surface comprising a recessed edge along the perimeter;
- and the second die disposed on the first surface of the first die whereby the recessed edge provides sufficient clearance for the first bonding element extending from the first die.
A stacked die assembly, comprising:
- at least two semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- a first die comprising a first surface disposed on the first surface of the substrate, and an opposing second surface;
- and
- a second die comprising a first surface having a plurality of bond pads located thereon, and a second surface having a recess formed therein;
- the first die at least partially disposed in the recess of the second die.
A stacked die assembly, comprising:
- at least two semiconductor dies disposed on a substrate in a stacked arrangement;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- a first die comprising a first surface disposed on the first surface of the substrate in a flip chip attachment, and an opposing second surface;
- and
- a second die comprising a first surface having a plurality of bond pads located thereon, and a second surface having a recess formed therein, the first die at least partially disposed in the recess of the second die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate, a first die, and a second die;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- the first die comprising a first surface having a plurality of bond pads located thereon, and a second surface;
- the second die comprising a first surface, a second surface, and a perimeter, the first surface having a plurality of bond pads located thereon, and the second surface comprising a recessed edge along the perimeter of the die;
- mounting the first die on the first surface of the substrate;
- connecting the bond pads of the first die to the terminal pads on the substrate with a first bonding element;
- and
- mounting the second die on the first die with the bond pads on the first die located within the recessed edge;
- the recessed edge having a height sufficient for clearance of the first bonding element extending from the bond pads of the first die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate comprising a first surface having terminal pads located thereon, and a second surface;
- mounting a first die on the first surface of the substrate;
- the first die comprising a first surface having a plurality of bond pads located thereon, and a second surface;
- connecting the bond pads of the first die to the terminal pads on the substrate with a first bonding element;
- providing a second die comprising a first surface having a plurality of bond pads located thereon, a second surface, a perimeter, and a thickness;
- removing a portion of the thickness from the second surface of the second die along the perimeter to form a recessed edge portion;
- mounting the second die on the first die with the bond pads on the first die located within the recessed edge portion;
- the recessed edge portion having a height sufficient for clearance of the first bonding element extending from the bond pads of the first die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate, a first die, and a second die;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- the first die comprising a first surface, and a second surface comprising a recess formed therein, the recess having a surface;
- and the second die comprising a first surface having a plurality of bond pads located thereon, and a second surface;
- mounting the first die on the substrate;
- and
- mounting the second die in the recess of the first die with the bond pads exposed.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate comprising a first surface having terminal pads located thereon, and a second surface;
- providing a first die comprising an active surface, a second surface, and a thickness;
- removing a portion of the thickness of the first die from the second surface to form a recess having a surface;
- mounting the active surface of the first die on the first surface of the substrate through a flip chip attachment;
- and
- mounting a second die in the recess of the first die;
- the second die comprising an active surface having a plurality of bond pads located thereon, and a second surface disposed on the surface of the recess.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate, a first die, a second die, and a third die;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- the first die comprising a first surface, and a second surface comprising a recess having a surface;
- the second die comprising a first surface having a plurality of bond pads located thereon, and a second surface;
- the third die comprising a first surface, a second surface, and a perimeter, the first surface having a plurality of bond pads located thereon, and the second surface comprising a recessed edge portion along the perimeter of the die;
- mounting the first die on the first surface of the substrate;
- mounting the second die in the recess of the first die with the bond pads exposed;
- connecting the bond pads of the second die to the terminal pads on the substrate with a first bonding element;
- and
- mounting the third die on the second die with the bond pads on the second die located within the recessed edge portion;
- the recessed edge portion having a height sufficient for clearance of the first bonding element extending from the bond pads of the second die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate comprising a first surface having terminal pads located thereon, and a second surface;
- providing a first die comprising an active surface, a second surface, and a thickness;
- removing a portion of the thickness of the first die from the second surface to form a recess having a surface;
- mounting the active surface of the first die on the first surface of the substrate;
- mounting a second die in the recess of the first die;
- the second die comprising an active surface having a plurality of bond pads located thereon, and a second surface;
- connecting the bond pads of the second die to the terminal pads on the substrate with a first bonding element;
- and
- providing a third die comprising an active surface having a plurality of bond pads located thereon, a second surface, a perimeter, and a thickness;
- removing a portion of the thickness of the third die from the second surface and along the perimeter to form a recessed edge portion;
- and
- mounting the third die on the active surface of the second die with the bond pads on the second die located within the recessed edge portion;
- the recessed edge portion having a height sufficient for clearance of the first bonding element extending from the bond pads of the second die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate, a first die, and a second die;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- the first die comprising a first surface having a plurality of bond pads located thereon and an opposing second surface having a recess formed therein, the recess having a surface;
- and the second die comprising a first active surface, a second surface, and a perimeter;
- attaching an adhesive element to at least one of the first surface of the substrate, and the surface of the recess;
- mounting the first die on the first surface of the substrate, with the adhesive element disposed within the recess;
- and
- connecting the bond pads of the first die to the terminal pads on the substrate with a first bonding element;
- and
- mounting the second die on the first surface of the first die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate comprising a first surface having terminal pads located thereon, and a second surface;
- providing a first die comprising an active surface, an opposing second surface, and a thickness;
- removing a portion of the thickness of the first die from the second surface to form a recess having a surface;
- attaching an adhesive element to at least one of the first surface of the substrate, and the surface of the recess;
- mounting the first die on the first surface of the substrate, with the adhesive element disposed within the recess;
- and
- connecting the bond pads of the first die to the terminal pads on the substrate with a first bonding element;
- and
- mounting a second die on the active surface of the first die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate, a first die, and a second die;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- the first die comprising a first surface having a plurality of bond pads located thereon and an opposing second surface having a recess formed therein, the recess having a surface;
- and the second die comprising a first surface, a second surface, and a perimeter, the first surface having a plurality of bond pads located thereon, and the second surface comprising a recessed edge portion along the perimeter of the die;
- attaching an adhesive element to at least one of the first surface of the substrate, and the surface of the recess;
- mounting the first die on the first surface of the substrate, with the adhesive element disposed within the recess;
- and
- connecting the bond pads of the first die to the terminal pads on the substrate with a first bonding element;
- and
- mounting the second die on the first die with the bond pads on the first die located within the recessed edge portion;
- the recessed edge portion having a height sufficient for clearance of the first bonding element extending from the bond pads of the first die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate comprising a first surface having terminal pads located thereon, and a second surface;
- providing a first die comprising an active surface, an opposing second surface, and a thickness;
- removing a portion of the thickness of the first die from the second surface to form a recess having a surface;
- attaching an adhesive element to at least one of the first surface of the substrate, and the surface of the recess;
- mounting the first die on the first surface of the substrate, with the adhesive element disposed within the recess;
- and
- connecting the bond pads of the first die to the terminal pads on the substrate with a first bonding element;
- and
- providing a second die comprising an active surface having a plurality of bond pads located thereon, a second surface, a perimeter, and a thickness;
- removing a portion of the thickness of the second die from the second surface and along the perimeter to form a recessed edge portion;
- and
- mounting the second die on the first die with the bond pads on the first die located within the recessed edge portion;
- the recessed edge portion having a height sufficient for clearance of the first bonding element extending from the bond pads of the first die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate, a first die, and a second die;
- the substrate comprising a first surface having terminal pads located thereon, and a second surface;
- the first die comprising an active surface, and a second surface;
- the second die comprising an active surface having a plurality of bond pads located thereon, and a second surface having a recess formed therein, the recess having a surface;
- mounting the first die on the first surface of the substrate;
- and
- mounting the second die on the first die whereby the first die is at least partially received within the recess of the second die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate comprising a first surface having terminal pads located thereon, and a second surface;
- mounting a first die on the first surface of the substrate, the first die comprising an active surface and an opposing second surface;
- providing a second die comprising an active surface, an opposing second surface, and a thickness;
- removing a portion of the thickness of the second die from the second surface to form a recess having a surface;
- mounting the second die on the first die whereby the first die is at least partially received within the recess of the second die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate comprising a first surface having terminal pads located thereon, and a second surface;
- providing a first die comprising an active surface and an opposing second surface;
- mounting the active surface of the first die on the first surface of the substrate through a flip chip attachment;
- providing a second die comprising an active surface, an opposing second surface, and a thickness;
- removing a portion of the thickness of the second die from the second surface to form a recess having a surface;
- attaching an adhesive element to at least one of the surface of the recess, and the second surface of the first die;
- and
- mounting the second die on the first die whereby the first die is at least partially received within the recess of the second die.
Dependencies are inferred from the claim text.