Semiconductor substrate processing method
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYoshiko Yoshida, Hideki Naruoka, Yasuhiro Kimura, Yasuo Yamaguchi, Toshiaki Iwamatsu, Yuuichi Hirano
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Abstract
An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direction of radiuses of the SOI substrate (10) to bring a buried oxide film (2) in the edge part of the SOI substrate (10) into a silicon-rich state. Thus an SOI substrate (100) is provided, where the buried oxide film (2) has substantially been eliminated in the edge part.
Claims8
A method for processing a semiconductor substrate having a first main surface, a second main surface on the opposite side, and a side part, wherein a part where an active region is formed in said first main surface is defined as a center part, and a part including a peripheral region around said center part in said first main surface and said side part is defined as an edge part,
- wherein said semiconductor substrate is an SOI substrate formed by an SIMOX method, and
- said semiconductor substrate comprises a buried oxide film and an SOI layer formed in said first main surface in a sequentially stacked form,
- said method comprising a silicon-ion implantation step wherein silicon ions are implanted into said edge part to eliminate said buried oxide film formed in said edge part.
A method for processing a semiconductor substrate having a first main surface, a second main surface on the opposite side, and a side part, wherein a part where an active region is formed in said first main surface is defined as a center part, and a part including a peripheral region around said center part in said first main surface and said side part is defined as an edge part, said semiconductor substrate processing method comprising the steps of,
- (a) forming an insulating film to cover said edge part of said semiconductor substrate,
- (b) implanting oxygen ions from the side of said first main surface of said semiconductor substrate comprising said insulating film to form a buried oxide film and an SOI layer in a sequentially stacked form in said first main surface by an SIMOX method, and
- (c) removing said insulating film,
- thereby forming an SOI substrate having said buried oxide film extending in parallel with the main surface to the outermost end of said edge part.
A method for processing a semiconductor substrate having a first main surface, a second main surface on the opposite side, and a side part, wherein a part where an active region is formed in said first main surface is defined as a center part, and a part including a peripheral region around said center part in said first main surface and said side part is defined as an edge part, said semiconductor substrate processing method comprising the steps of,
- (a) applying a first oxygen-ion implantation from the side of said first main surface of said semiconductor substrate all over the surface,
- (b) selectively applying a second oxygen-ion implantation into said edge part from the side of said first main surface of said semiconductor substrate, and
- (c) applying an annealing processing to diffuse the oxygen ions implanted by said first and second oxygen-ion implantations to form a buried oxide film and a protective oxide film respectively in said center part and in said edge part and also to form an SOI layer on said buried oxide film,
- wherein said second oxygen-ion implantation has its implant peak set at a shallower position than that in said first oxygen-ion implantation, and
- said protective oxide film is formed in said edge part on at least the side of said first main surface from the surface to the inside.
Dependencies are inferred from the claim text.