Laser apparatus, laser irradiating method, manufacturing method of semiconductor device, semiconductor device, manufacturing system of semiconductor device using the laser apparatus, and electronic device

A production system of a semiconductor device, characterized by comprising:

• first means for making a marker in a semiconductor film formed on a dielectric surface;
• second means for storing pattern information to be formed on said semiconductor film;
• a laser oscillating apparatus;
• an optical system that processes a shape of a beam spot of a laser beam oscillated from said laser oscillating apparatus;
• third means for scanning an irradiation position of said processed laser beam in one of a first direction and a second direction crossing with each other;
• fourth means for, with reference to said marker, identifying a region, obtained after patterning said semiconductor film through the use of said pattern information, to be used as an insular semiconductor film, and defining a portion to be irradiated by said laser beam scanned in said first direction and a portion to be irradiated by said laser beam scanned in said second direction, so that said laser beam scanned in said first direction and said laser beam scanned in said second direction are irradiated at least to said region to be used as said insular semiconductor film;
• and
• fifth means for patterning said semiconductor film according to said pattern information after said laser beam scanned in said first direction and said laser beam scanned in said second direction are irradiated,
• wherein:
• said third means controls the irradiation position of said laser beam on said semiconductor film in such a manner that said processed laser beam is irradiated sequentially to said defined portion to be irradiated by said laser beam scanned in said first direction and said defined portion to be irradiated by said laser beam scanned in said second direction;
• and
• a width of said beam spot of said laser beam on said semiconductor film in a direction to be scanned is changed when said laser beam is irradiated.

A production system of a semiconductor device, characterized by comprising:

• first means for making a marker in a semiconductor film formed on a dielectric surface by a first laser beam;
• second means for storing pattern information to be formed on said semiconductor film;
• a laser oscillating apparatus;
• an optical system that processes a shape of a beam spot of a second laser beam oscillated from said laser oscillating apparatus;
• third means for scanning an irradiation position of said processed second laser beam in one of a first direction and a second direction crossing with each other;
• fourth means for, with reference to said marker, identifying a region, obtained after patterning said semiconductor film through the use of said pattern information, to be used as an insular semiconductor film, and defining a portion to be irradiated by said second laser beam scanned in said first direction and a portion to be irradiated by said second laser beam scanned in said second direction, so that said second laser beam scanned in said first direction and said second laser beam scanned in said second direction are irradiated at least to said region to be used as said insular semiconductor film;
• and
• fifth means for patterning said semiconductor film according to said pattern information after said second laser beam scanned in said first direction and said second laser beam scanned in said second direction are irradiated,
• wherein said third means controls the irradiation position of said second laser beam on said semiconductor film in such a manner that said processed second laser beam is irradiated sequentially to said defined portion to be irradiated by said second laser beam scanned in said first direction and said defined portion to be irradiated by said second laser beam scanned in said second direction.

A method of manufacturing a semiconductor device, characterized in that an insular semiconductor film having crystalline characteristics is formed by irradiating a first laser beam in a first direction to a semiconductor film at a region defined by pattern information and then irradiating a second laser beam in a second direction at a region defined by said pattern information and thereby enhancing the crystalline characteristics of said regions defined by said pattern information, followed by patterning of said regions where the crystalline characteristics have been enhanced through the use of said pattern information,

• wherein:
• said first laser beam or said second laser beam is irradiated to said semiconductor film at a partial region containing said regions defined by said pattern information;
• and
• said first direction and said second direction cross with each other.

A method of manufacturing a semiconductor device, characterized in that an insular semiconductor film having crystalline characteristics is formed by irradiating a first laser beam in a first direction to a semiconductor film at a region defined by pattern information and then irradiating a second laser beam in a second direction at a region defined by said pattern information and thereby enhancing the crystalline characteristics of said regions defined by said pattern information, followed by patterning of said regions where the crystalline characteristics have been enhanced through the use of said pattern information, wherein:

• said first laser beam or said second laser beam is irradiated to said semiconductor film at a partial region containing said regions defined by said pattern information;
• said first direction and said second direction cross with each other;
• and
• in a thin film transistor fabricated using said insular semiconductor film, a direction in which carriers move in a channel forming region is in parallel with said first direction or said second direction.

A method of manufacturing a semiconductor device, characterized in that an insular semiconductor film having crystalline characteristics is formed by irradiating a first laser beam in a first direction to a semiconductor film at a region defined by pattern information and then irradiating a second laser beam in a second direction at a region defined by said pattern information and thereby enhancing the crystalline characteristics of said regions defined by said pattern information, followed by patterning of said regions where the crystalline characteristics have been enhanced through the use of said pattern information, wherein:

• said first laser beam or said second laser beam is irradiated to said semiconductor film at a partial region containing said regions defined by said pattern information;
• said first direction and said second direction cross with each other;
• in a thin film transistor fabricated using said insular semiconductor film, a direction in which carriers move in a channel forming region is in parallel with said first direction;
• and
• said first laser beam is irradiated at energy density higher than energy density of said second laser beam.

A method of manufacturing a semiconductor device, characterized in that an insular semiconductor film having crystalline characteristics is formed by irradiating a first laser beam in a first direction to a semiconductor film at a region defined by pattern information and then irradiating a second laser beam in a second direction at a region defined by said pattern information and thereby enhancing the crystalline characteristics of said regions defined by said pattern information, followed by patterning of said regions where the crystalline characteristics have been enhanced through the use of said pattern information, wherein:

• said first laser beam or said second laser beam is irradiated to said semiconductor film at a partial region containing said regions defined by said pattern information;
• said first direction and said second direction cross with each other;
• in a thin film transistor fabricated using said insular semiconductor film, a direction in which carriers move in a channel forming region is in parallel with said second direction;
• and
• said second laser beam is irradiated at energy density higher than energy density of said first laser beam.

A laser apparatus, characterized by comprising:

• a laser oscillating apparatus;
• an optical system that processes a shape of a beam spot of a laser beam outputted from said laser oscillating apparatus on a semiconductor film;
• first means for storing pattern information to be formed on said semiconductor film;
• second means for scanning an irradiation position of said processed laser beam in one of a first direction and a second direction crossing with each other;
• third means for, with reference to a maker, identifying a region, obtained after patterning said semiconductor film through the use of said stored pattern information, to be used as an insular semiconductor film, and controlling said second means in such a manner that said laser beam scanned in said first direction and said laser beam scanned in said second direction are irradiated to said region to be used as said insular semiconductor film,
• wherein said laser beam is irradiated to said semiconductor film only at a partial region containing said region to be used as said insular semiconductor film.

A laser apparatus, characterized by comprising:

• a laser oscillating apparatus;
• an optical system that processes a shape of a beam spot of a laser beam outputted from said laser oscillating apparatus on a semiconductor film;
• first means for storing pattern information to be formed on said semiconductor film;
• second means for scanning an irradiation position of said processed laser beam in one of a first direction and a second direction crossing with each other;
• third means for, with reference to a maker, identifying a region, obtained after patterning said semiconductor film through the use of said stored pattern information, to be used as an insular semiconductor film, and controlling said second means in such a manner that said laser beam scanned in said first direction and said laser beam scanned in said second direction are irradiated to said region to be used as said insular semiconductor film,
• wherein:
• said laser beam is irradiated to said semiconductor film only at a partial region containing said region to be used as said insular semiconductor film;
• and
• a width of said beam spot of said laser beam on said semiconductor film is variable in a direction to be scanned.

A method of irradiating a laser beam, characterized in that:

• a laser beam is outputted from a laser oscillating apparatus;
• said laser beam is irradiated to a semiconductor film at a region defined by pattern information through scanning in a first direction and then through scanning in a second direction;
• said first direction and said second direction cross with each other;
• and
• said laser beam is irradiated to said semiconductor film only at a partial region containing said region defined by said pattern information.

A method of irradiating a laser beam, characterized in that:

• a laser beam is outputted from a laser oscillating apparatus;
• said laser beam is irradiated to a semiconductor film at a region defined by pattern information through scanning in a first direction and then through scanning in a second direction;
• said laser beam is irradiated to said semiconductor film only at a partial region containing said region defined by said pattern information;
• said first direction and said second direction cross with each other;
• a shape of a beam spot of said laser beam is a rectangular shape or an elliptical shape;
• and
• an angle between a central axis of said beam spot in a longitudinal direction and said first or second direction is kept at or nearly at right angles.

A method of irradiating a laser beam, characterized in that:

• a laser beam is outputted from a laser oscillating apparatus;
• said laser beam is irradiated to a semiconductor film at a region defined by pattern information through scanning in a first direction and then through scanning in a second direction;
• said laser beam is irradiated to said semiconductor film only at a partial region containing said region defined by said pattern information;
• said first direction and said second direction cross with each other;
• a shape of a beam spot of said laser beam is a rectangular shape or an elliptical shape;
• and
• an angle between a central axis of said beam spot in a longitudinal direction and said first or second direction is in a range from 10° to 80° both inclusive.