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AssigneeUnited Microelectronics Corp.
InventorsComing Chen, Juan-Yuan Wu, Water Lur
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A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relative large active regions and a number of relative small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is first formed A number of shallow trenches are formed between the active regions An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial rever active mask has an opening at a central part of each relative large active region. The opening exposes a portion of the oxide layer. The opening has at least a dummy pattern. The oxide layer on the central part of each large active region is removed to expose the silicon nitride layer. The partial reverse active mask is removed The oxide layer is planarized to expose the silicon nitride layer.
A method of chemical-mechanical polishing for forming a shallow trench isolation, wherein a substrate having a plurality of active regions, including a plurality of relative large active regions and a plurality of relative small active regions, is provided, comprising.
3 A method as claimed in claim 1, wherein the oxide layer is formed by high density plasma chemical vapor deposition.
4 A method as claimed in claim 1, wherein the exposed portion of the oxide layer is removed by anisotropic etching
5 A method as claimed in claim 4, wherein the exposed portion of the oxide layer is removed, using the silicon nitride layer as an etching stop layer.
6 A method as claimed in claim 1, wherein the oxide layer is planarized by chemical mechanical polishing.
A method of forming a partial reverse active mask pattern, applied in fabricating shallow trench isolation, wherein the method comprises.
8 A method as claimed in claim 7, wherein in said step of shrinking the relative large active region patterns and the relative small active patterns, a shrinking size is about between 0.5 μm and 2 μm.
9 A method as claimed in claim 7, wherein in said step of enlarging the remaining relative large active region patterns, an enlarging size is about between 0.2 μm and 2 μm
10 A method as claimed in claim 7, wherein an enlarging size in said step of enlarging the remaining relative large active region patterns is substantially smaller than a shrinking size in said step of shrinking the relative large active region patterns and the relative small active patterns.
Dependencies are inferred from the claim text.