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US 2003/0148584 A1Published application
Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel
AssigneeIntel Corporation
InventorsBrian Roberds, Brian S. Doyle
Life of this patent
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Abstract
A method for forming a strain layer on an underside of a channel in an MOS transistor in order to produce a mechanical stress in the channel, increasing a mobility of carriers in the channel and an apparatus produced from such a method.
Claims16
A method comprising:
- forming a gate stack over a semiconductor substrate;
- removing a portion of the semiconductor substrate to form an open region but retaining a portion of the semiconductor substrate under the gate stack to define a channel in which the open region underlies the channel exposing a portion of an underside of the channel;
- and
- forming a strain layer in the open region on a portion of the exposed underside of the channel.
1 more element
A method comprising:
- forming a semiconductor substrate above an insulation layer;
- forming a gate stack above the semiconductor substrate;
- removing a portion of the semiconductor substrate to form an open region but retaining a portion of the semiconductor substrate under the gate stack to define a channel in which the open region underlies the channel exposing a portion of an underside of the channel;
- and
- forming a strain layer in the open region on a portion of the exposed underside of the channel.
2 more elements
Dependencies are inferred from the claim text.