Capacitors of semiconductor devices and methods of fabricating the same

A capacitor of a semiconductor device comprising:

• an interlayer dielectric pattern disposed on a semiconductor substrate, the interlayer dielectric pattern having an opening, the opening exposing a surface region of the semiconductor substrate;
• a silicide pattern formed on the surface region of the semiconductor substrate exposed through the opening;
• a lower electrode covering an inner wall of the opening and the silicide pattern;
• a dielectric layer covering an inner wall and a top surface of the lower electrode;
• and
• an upper electrode disposed on the dielectric layer.

A method of fabricating a capacitor on a semiconductor device comprising:

• providing a semiconductor substrate;
• forming a interlayer dielectric layer on the semiconductor substrate;
• forming a interlayer dielectric pattern, the interlayer dielectric pattern comprising an opening, the opening comprising an inner wall and exposing a predetermined surface region of the semiconductor substrate;
• forming a metal layer on the interlayer dielectric pattern;
• forming a lower electrode layer on the metal layer;
• forming a lower electrode on the inner wall of the opening and the predetermined surface region of the semiconductor substrate;
• forming a dielectric layer on the lower electrode;
• and
• forming an upper electrode layer on the dielectric layer.