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OwnerHideo Yamanakainventor
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The present invention provides a method capable of easily forming a polycrystalline or monocrystalline semiconductor thin film of polycrystalline silicon with a high degree of crystallization and high quality at low cost, and an apparatus for carrying out the method. In a method of forming a polycrystalline (or monocrystalline) semiconductor thin film, a method of manufacturing a semiconductor device and an apparatus for carrying out these methods, in order to form a large-grain polycrystalline (or monocrystalline) semiconductor thin film (7) such as a polycrystalline silicon film with a high degree of crystallization on a substrate (1) or manufacturing a semiconductor device having the polycrystalline (or monocrystalline) semiconductor thin film (7), a low-crystalline semiconductor thin film (7A) is formed on the substrate (1), and then heated in a molten, semi-molten or non-molten state by laser annealing with ultraviolet rays (UV) or/and deep ultraviolet rays (DUV) and cooled to promote crystallization of the low-crystalline semiconductor thin film (7A), obtaining the polycrystalline (or monocrystalline) semiconductor thin film (7).
A method of forming a semiconductor thin film in forming a polycrystalline or monocrystalline semiconductor thin film on a substrate, the method comprising the first step of forming a low-crystalline semiconductor thin film on the substrate, and the second step of heating the low-crystalline semiconductor thin film in a molten, semi-molten or non-molten state by laser annealing with ultraviolet rays (UV) or/and deep ultraviolet rays (DUV) and cooling the thin film to promote crystallization of the low-crystalline semiconductor thin film.
A method of manufacturing a semiconductor device in manufacturing a semiconductor device comprising a polycrystalline or monocrystalline semiconductor thin film on a substrate, the method comprising the first step of forming a low-crystalline semiconductor thin film on the substrate, and the second step of heating the low-crystalline semiconductor thin film in a molten state, a semi-molten state or non-molten state by laser annealing with ultraviolet rays (UV) or/and deep ultraviolet rays (DUV) and cooling the thin film to promote crystallization of the low-crystalline semiconductor thin film.
An apparatus for forming a polycrystalline or monocrystalline semiconductor thin film on a substrate, the apparatus comprising first means for forming a low-crystalline semiconductor thin film on the substrate, and second means for heating the low-crystalline semiconductor thin film in a molten, semi-molten or non-molten state by laser annealing with ultraviolet rays (UV) or/and deep ultraviolet rays (DUV) and cooling the thin film to promote crystallization of the low-crystalline semiconductor thin film.
An apparatus for manufacturing a semiconductor device comprising a polycrystalline or monocrystalline semiconductor thin film on a substrate, the apparatus comprising first means for forming a low-crystalline semiconductor thin film on the substrate, and second means for heating the low-crystalline semiconductor thin film in a molten state, a semi-molten state or non-molten state by laser annealing with ultraviolet rays (UV) or/and deep ultraviolet rays (DUV) and cooling the thin film to promote crystallization of the low-crystalline semiconductor thin film.
Dependencies are inferred from the claim text.