Method for suppressing short channel effect of a semiconductor device
OwnerKent Kuohua Changinventor
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Abstract
A method to suppress the short channel effect of a semiconductor device is described. The method provides a substrate having a gate structure formed thereon. A source/drain extension region and a source/drain region formed in the substrate beside the gate structure. A pocket ion implantation process is conducted to form a pocket doped region underneath the source/drain extension region. A rapid thermal process is conducted subsequent to the formation of the source/drain extension region, the source/drain region and the pocket doped region.
Claims20
A method to suppress a short channel effect of a semiconductor device, comprising:
- forming a gate structure on a substrate;
- forming a source/drain extension region and a source/drain region in the substrate beside the gate structure;
- performing a pocket ion implantation process to form a pocket doped region under the source/drain extension region;
- and
- performing a rapid thermal process to anneal the source/drain extension region, the source/drain region and the pocket doped region concurrently.
A method to suppress a short channel effect of a semiconductor device, comprising:
- forming a gate structure on a substrate;
- performing a first ion implantation process to form a source/drain extension region in the substrate using the gate structure as an implantation mask;
- forming a spacer on a sidewall of the gate structure;
- performing a second ion implantation process to form a source/drain region using the spacer as an implantation mask;
- performing a pocket doped implantation process to form a pocket doped region under the source/drain extension region after the formation of the source/drain extension region and the source/drain region;
- and
- performing a rapid thermal process after the formation of the pocket doped region to anneal the source/drain extension region, the source/drain region and the pocket doped region.
Dependencies are inferred from the claim text.