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US 2003/0148562 A1Published application
Field effect transistor
AssigneeInfineon Technologies AG
InventorsRichard Johannes Luyken, Till Schlösser, Thomas Peter Haneder, Wolfgang Hönlein, Franz Kreupl
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Abstract
The invention relates to a field effect transistor comprising a nanowire forming a source region, a channel region and a drain region. A nanotube forming a gate region is arranged at a distance from the first nanotube or is fitted in such a way that essentially no tunnel flow between the nanotubes is possible and the conductivity of the channel region of the first nanotube can be regulated by means of a field effect by applying an electric voltage to the second nanotube.
Claims23
A field-effect transistor,
- having a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire being a semiconducting and/or metallically conductive nanowire,
- having at least one nanotube, which forms a gate region of the field-effect transistor, the nanotube being a semiconducting and/or metallically conductive nanotube,
- the nanowire and the nanotube being arranged at a distance from one another in such a manner or being set up in such a manner that it is substantially impossible for there to be a tunneling current between the nanowire and the nanotube, and that the conductivity of the channel region of the nanowire can be controlled by means of a field effect as a result of an electric voltage being applied to the nanotube.
Dependencies are inferred from the claim text.