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US 2003/0148561 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorSetsuo Nakajima
Life of this patent
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Abstract
In a thin film transistor, a metallic element promoting crystallization of an amorphous silicon film is effectively removed and the productivity is improved. By using a silicon film containing an element belonging to the group 15 such as phosphorus through contact holes reaching a source region and a drain region, a metallic element promoting crystallization of an amorphous silicon film can be effectively removed or decreased and the productivity can be improved.
Claims26
A method of manufacturing a semiconductor device comprising the steps of:
- forming a base insulating film on a substrate;
- forming an amorphous semiconductor film on the base insulating film;
- doping a metallic element promoting crystallization of the amorphous semiconductor film and crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;
- forming a gate insulating film on the crystalline semiconductor film;
- forming a gate electrode on the gate insulating film;
- doping an impurity element in a selected region of the crystalline
- semiconductor film to form a source region and a drain region;
- forming an interlayer insulating film on the gate electrode;
- forming a contact hole in the interlayer insulating film, the contact hole reaching the source region or the drain region;
- forming a film containing an impurity element belonging to the group 15 of the periodic table in the contact hole reaching the source region or the drain region and on the interlayer insulating film;
- gettering by thermal annealing the metallic element contained in the crystalline semiconductor film;
- and
- forming a conductive film on the film containing an impurity element belonging to the group 15 of the periodic table.
10 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode on the insulating surface;
- forming a gate insulating film on the gate electrode;
- forming an amorphous semiconductor film on the gate insulating film;
- doping a metallic element promoting crystallization of the amorphous semiconductor film and crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;
- forming a protective insulating film on the crystalline semiconductor film;
- doping an impurity element in a selected region of the crystalline semiconductor film to form a source region and a drain region;
- forming an interlayer insulating film on the protective insulating film;
- forming a contact hole in the protective insulating film and the interlayer insulating film, the contact hole reaching the source region or the drain region;
- forming a film containing an impurity element belonging to the group 15 of the periodic table in the contact hole reaching the source region or the drain region and on the interlayer insulating film;
- gettering by thermal annealing the metallic element contained in the crystalline semiconductor film;
- and
- forming a conductive film on the film containing an impurity element belonging to the group 15 of the periodic table.
9 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon on an insulating surface;
- providing said semiconductor film with a metal containing material having a capability of promoting crystallization of amorphous silicon;
- crystallizing said semiconductor film provided with said metal containing material;
- forming source and drain regions in the crystallized semiconductor film;
- forming an insulating film over the crystallized semiconductor film;
- forming at least one contact in the insulating film to expose at least one of the source and drain regions;
- forming a conductive film on the insulating film wherein said first conductive film is in contact with at least one of the source and drain regions through said at least one contact hole and contains an impurity element belonging to the group 15 of the periodic table;
- gettering the metallic contained in the crystallized semiconductor film into the conductive film;
- and
- patterning the conductive film after the gettering to form at least one of source and drain electrodes.
7 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon on an insulating surface;
- providing said semiconductor film with a metal containing material having a capability of promoting crystallization of amorphous silicon;
- crystallizing said semiconductor film provided with said metal containing material;
- forming source and drain regions in the crystallized semiconductor film;
- forming an insulating film over the crystallized semiconductor film;
- forming at least one contact in the insulating film to expose at least one of the source and drain regions;
- forming a first conductive film on the insulating film wherein said first conductive film is in contact with at least one of the source and drain regions through said at least one contact hole and contains an impurity element belonging to the group 15 of the periodic table;
- forming a second conductive film on the first conductive film;
- gettering the metallic contained in the crystallized semiconductor film into the first conductive film;
- and
- patterning the first and second conductive films after the gettering to form at least one of source and drain electrodes.
8 more elements
Dependencies are inferred from the claim text.