Method of manufacturing integrated circuit
AssigneeRenesas Technology Corp.
InventorsNorio Hasegawa, Joji Okada, Toshihiko Tanaka, Kazutaka Mori, Ko Miyazaki
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Abstract
In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1 is used which is provided partially with light shielding patterns 3a formed of a resist film, in addition to light shielding patterns formed of a metal.
Claims4
A method of manufacturing a semiconductor integrated circuit device, comprising a step of transferring patterns onto a resist film formed on a main surface of a semiconductor wafer by a superimposed exposure process using a first photomask and a second photomask, the first photomask having a light shielding portion formed of a metal on a main surface of a first mask substrate, the second photomask having a light shielding portion formed of a resist film, on a main surface of a second mask substrate.
Dependencies are inferred from the claim text.