Silicon resist for photolithography at short exposure wavelengths and process for making photoresists
AssigneeInfineon Technologies AG
InventorsJorg Rottstegge, Christoph Hohle, Christian Eschbaumer, Michael Sebald, Wolf-Dieter Domke
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Abstract
A chemically amplified photo-resist includes a polymer containing acid-labile radicals attached to a polar group and also contains anchor groups that allow attachment of a consolidating agent. The polymer includes first repeating units containing siloxane groups. The photoresist on the one hand exhibits an enhanced transparency for short-wavelength radiation and on the other hand permits chemical consolidation of the structured resist. A process for producing structured resists is a also described.
Claims14
A chemically amplified photo-resist, comprising:
- a polymer having a polar group, acid-labile radicals attached to said polar group to be eliminated for increasing solubility of the polymer in polar developers, and anchor groups for attaching to a linking group of a consolidating agent, the polymer including first repeating units having a structure according to Formula I
- 9
- where
- A is selected from the group consisting of a single bond, —O—, and —C(O)—O—;
- B is selected from the group consisting of —(CR5R6)n—, —(O—(CR5R6))n—, a cyclo-alkylene group having from 5 to 20 carbon atoms, and an arylene group having from 6 to 22 carbon atoms;
- R1 is selected from the group consisting of —H, an alkyl group having from 1 to 10 carbon atoms, —CN, and —CF3;
- R2, R3, and R4 are each selected from the group consisting of an alkyl group having from 1 to 10 carbon atoms, a cycloalkyl group having from 5 to 20 carbon atoms, an aryl group having from 6 to 22 carbon atoms, and a siloxane group;
- R5 and R6 are selected from the group consisting of —H and an alkyl group having from 1 to 10 carbon atoms;
- and
- n is an integer from 0 to 6;
- and
- if A is a single bond, then B is a —CH2— group, R1 is —H. R2, R3, and R4 may not simultaneously be a CH3 group, and A and B are chosen so that no Si—O—C group is formed;
- a photoacid generator;
- and
- a solvent.
The chemically amplified photoresist of claim 10, wherein at least some of said carboxyl groups of said third repeating units have been esterified with an acid-labile radical.
A process for producing structured resists, which comprises the steps of:
- (a) applying a photoresist to a substrate, the photoresist including:
- a polymer having a polar group, acid-labile radicals attached to the polar group to be eliminated for increasing solubility of the polymer in polar developers, and anchor groups for attaching to a linking group of a consolidating agent, the polymer including first repeating units having a structure according to Formula I
- 12
- where
- A is selected from the group consisting of a single bond, —O—, and —C(O)—O—;
- B is selected from the group consisting of —(CR5R6)n—, —(O—(CR5R6))n—, a cyclo-alkylene group having from 5 to 20 carbon atoms, and an arylene group having from 6 to 22 carbon atoms;
- R1 is selected from the group consisting of —H, an alkyl group having from 1 to 10 carbon atoms, —CN, and —CF3;
- R2, R3, and R4 are each selected from the group consisting of an alkyl group having from 1 to 10 carbon atoms, a cycloalkyl group having from 5 to 20 carbon atoms, an aryl group having from 6 to 22 carbon atoms, and a siloxane group;
- R5 and R6 are selected from the group consisting of —H and an alkyl group having from 1 to 10 carbon atoms;
- and
- n is an integer from 0 to 6;
- and
- if A is a single bond, B is a —CH2— group and R1 is —H, R2, R3, and R4 may not simultaneously be a CH3 group, and, A and B are chosen so that no Si—O—C group is formed,
- a photoacid generator, and
- a solvent;
- (b) removing the solvent to give a photosensitive resist film;
- (c) sectionally exposing sections of the resist film to liberate an acid from the photoacid generator in the exposed sections of the resist film;
- (d) contrasting the exposed resist film by eliminating the acid-labile groups of the polymer with the acid in the exposed sections of the resist film;
- (e) developing the exposed and contrasted resist film in a developer to remove the exposed sections of the resist film to give a structured resist;
- (f) applying a consolidating agent to give a consolidated structured resist;
- and
- (g) removing excess consolidating agent.
Dependencies are inferred from the claim text.