Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
AssigneeHynix Semiconductor Inc.
InventorsSung Koo Lee, Jae Chang Jung, Geun Su Lee, Ki Soo Shin
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Abstract
A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.
Claims20
A bottom anti-reflective coating composition for a semiconductor device comprising a base resin, a curing agent and a solvent, further comprising an acid generator.
A process of forming photoresist patterns comprising:
- (a) coating and baking an organic bottom anti-reflective coating composition on an underlying layer to form a bottom anti-reflective coating film;
- and
- (b) forming a photoresist film on the bottom anti-reflective coating film, wherein the bottom anti-reflective coating composition comprises an acid generator.
Dependencies are inferred from the claim text.