Nitride-based semiconductor laser device
AssigneeSanyo Electric Co., Ltd.
InventorsYasuhiko Nomura, Takashi Kano
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Abstract
A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.
Claims24
A nitride-based semiconductor laser device comprising:
- a first cladding layer consisting of a first conductivity type nitride-based semiconductor;
- an emission layer, formed on said first cladding layer, consisting of a nitride-based semiconductor;
- and
- a second cladding layer, formed on said emission layer, consisting of a second conductivity type nitride-based semiconductor, wherein
- said emission layer includes:
- an active layer emitting light,
- a light guiding layer for confining light, and
- a carrier blocking layer, arranged between said active layer and said light guiding layer, having a larger band gap than said light guiding layer.
A nitride-based semiconductor laser device comprising:
- a first cladding layer consisting of a first conductivity type nitride-based semiconductor;
- an emission layer, formed on said first cladding layer, consisting of a nitride-based semiconductor;
- and
- a second cladding layer, formed on said emission layer, consisting of a second conductivity type nitride-based semiconductor, wherein
- said emission layer includes:
- an active layer emitting light, and
- a light guiding layer formed on at least either the upper surface or the lower surface of said active layer for confining light,
- said nitride-based semiconductor laser device further comprising a light spreading layer, arranged between said light guiding layer and either said first or second cladding layer being formed on the same side of said light guiding layer, having a smaller refractive index and a larger band gap than said either first or second cladding layer being formed on the same side of said light guiding layer.
A nitride-based semiconductor laser device comprising:
- a first cladding layer consisting of a first conductivity type nitride-based semiconductor;
- an emission layer, formed on said first cladding layer, consisting of a nitride-based semiconductor;
- and
- a second cladding layer, formed on said emission layer, consisting of a second conductivity type nitride-based semiconductor,
- said nitride-based semiconductor laser device reducing the degree of optical confinement in said emission layer thereby reducing a vertical beam divergence angle to not more than 20°.
Dependencies are inferred from the claim text.