Power supply circuit structure for a row decoder of a multilevel non-volatile memory device
AssigneeSTMicroelectronics S.r.I.
InventorsRino Micheloni, Giovanni Campardo
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Abstract
A power supply circuit structure is useful with a row decoder for reading/writing data from/into memory cells of an integrated electrically programmable/erasable non-volatile memory device incorporating an array of multilevel memory cells. Advantageously, multiple supply voltages to the row decoder and a switching circuit for transferring the voltages over hierarchic-mode enabled conduction paths are provided.
Claims14
A power supply circuit structure for a row decoder of a multilevel non-volatile memory device including a matrix of memory cells and associated reading and programming circuits, wherein the memory device comprises multiple supply voltages for the row decoder and switching means for transferring said voltages through conduction paths that are enabled according to a hierarchic-mode decoding system.
An integrated memory device including a matrix of multilevel memory cells, a row decoder associated to said matrix and a power supply circuit structure for said row decoder, wherein said power supply circuit produces multiple supply voltages for the row decoder, switching means being provided for transferring said voltages through conduction paths that are enabled according to a hierarchic decoding procedure.
Dependencies are inferred from the claim text.