Magnetic memory

A magnetic memory comprising:

• a first wiring extending in a first direction;
• a first magnetoresistance effect element formed on the first wiring and having a magnetic recording layer;
• a second magnetoresistance effect element formed under the first wiring and having a magnetic recording layer;
• a second wiring extending in a direction across the first direction above the first wiring;
• a third wiring extending in a direction across the first direction below the first wiring;
• one end of the second wiring and one end of the third wiring being connected together to form a single current path;
• a recording circuit which supplies a current to the first wiring while supplying a current to the single current path, and thereby exerting a current magnetic field to the magnetic recording layers in order to record one of two values of two-valued information;
• and
• a reading circuit which detects a difference between output signals obtained from the magnetoresistance effect elements by supplying a sense current to the first and second magnetoresistance effect elements via the first wiring in order to read out the recorded data as one of two values of the two-valued information,
• directions of magnetization in the recording layers of the first and second magnetoresistance effect elements being oriented in opposite
• directions from each other by supplying the current to the first wiring upon recording of one of two values of the two-valued information.

A magnetic memory comprising:

• a first wiring extending in a first direction;
• a first magnetoresistance effect element formed on the first wiring and having a magnetic recording layer;
• a second magnetoresistance effect element formed under the first wiring and having a magnetic recording layer;
• a second wiring extending in a direction across the first direction above the first wiring;
• a third wiring extending in a direction across the first direction below the first wiring;
• a recording circuit which supplies a current to the first wiring while supplying a current to at least one of the second and third wirings, and thereby exerting a current magnetic field to at least one of the magnetic recording layers in order to record one of multiple values of multi-valued information;
• and
• a reading circuit which detects a difference between output signals obtained from the magnetoresistance effect elements by supplying a sense current to the first and second magnetoresistance effect elements via the first wiring in order to read out the recorded data as one of multiple values of the multi-valued information

A magnetic memory comprising:

• a first wiring extending in a first direction;
• a first magnetoresistance effect element formed on the first wiring and having a magnetic recording layer;
• a second magnetoresistance effect element formed under the first wiring and having a magnetic recording layer;
• a second wiring extending in a direction across the first direction above the first wiring;
• a third wiring extending in a direction across the first direction below the first wiring;
• a switching element connected between one end of the second wiring and one end of the third wiring;
• a recording circuit which controls the switching element to hold the one end of the second wiring and the one end of the third wiring in connection to form a single current path and supplies a current to the first wiring while supplying a current to the single current path, and thereby exerting a current magnetic field to the magnetic recording layers in order to record one of multiple values of multi-valued information, the recording circuit controlling the switching element to hold the one end of the second wiring and the one end of the third wiring in disconnection and supplying a current to the first wiring while supplying a current to at least one of the second and third wirings, and thereby exerting a current magnetic field to at least one of the magnetic recording layers in order to record another of multiple values of the multi-valued information;
• and
• a reading circuit which detects a difference between output signals obtained from the magnetoresistance effect elements by supplying a sense current to the first and second magnetoresistance effect elements via the first wiring in order to read out the recorded data as one of multiple values of the multi-valued information.