Liquid crystal display and a method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsByung-Hoo Jung, Chang-Won Hwang, Byung-Seong Bae
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Abstract
A source electrode and a metal pattern for a storage capacitor are formed on an insulating substrate, a silicon layer having a doped source region and a doped drain region is formed on the substrate and the source and the drain regions directly contact to the source electrode and the metal pattern. A gate insulating film is formed thereon, and a storage electrode is formed on the gate insulating film opposite the metal pattern. A passivation film covering the storage electrode is formed and the pixel electrode is formed thereon. The pixel electrode is directly connected to the drain region or to the metal pattern.
Claims96
A liquid crystal display comprising:
- an insulating substrate;
- a silicon layer formed on the substrate;
- a gate insulating film covering the silicon layer;
- a gate electrode formed on the gate insulating film;
- and
- a storage electrode formed on the gate insulating film,
- wherein the silicon layer comprises a doped source region, a doped drain region, a first region undoped and located between the source region and the drain region, and a second region undoped, adjoining to the drain region and separated from the first region, and the storage electrode is located opposite the second region.
A driving method of a liquid crystal display, comprising a thin film transistor having a silicon layer having a doped source region, a doped drain region, a first undoped region located between the source region and the drain region and a second undoped region adjoining to the drain region, a gate electrode and an insulating layer interposed between the silicon layer and the gate electrode, and a storage electrode overlapping the second undoped region via the insulating layer, the method comprising the steps of:
- applying a voltage for turning on the thin film transistor to the gate electrode;
- applying a display signal voltage to the source region;
- and
- applying a voltage equal to or larger than the sum of the threshold voltage of the thin film transistor and the maximum value of the display signal voltage.
A manufacturing method of a liquid crystal display, comprising the steps of:
- forming a silicon layer on an insulating substrate;
- forming a gate insulating film covering the silicon layer;
- forming a gate and a storage electrodes respectively overlapping the silicon layer on the gate insulating film;
- and
- forming a source and a drain regions by doping the silicon layer using the gate electrode and the storage electrode as a mask.
A liquid crystal display comprising:
- an insulating substrate;
- a first metal pattern formed on the substrate;
- a second metal pattern formed of the same layer as the first metal pattern and separated from the first metal pattern;
- a silicon layer formed over the first and the second metal pattern and including a source and a drain regions respectively connected to the first and the second metal patterns;
- a gate insulating film covering the silicon layer;
- a gate electrode formed on the gate insulating film and located between the source region and the drain region;
- and
- a storage electrode formed on the gate insulating film and located opposite the second metal pattern.
A manufacturing method of a liquid crystal display comprising the steps of:
- forming a source electrode and a metal pattern on an insulting substrate;
- forming a silicon layer overlapping the source electrode and the metal pattern;
- forming a gate insulating film covering the silicon layer;
- forming a gate pattern including a storage electrode and a gate electrode overlapping the silicon layer on the gate insulating film;
- and
- forming a source and a drain regions by doping the silicon layer by using the gate pattern as a mask.
A liquid crystal display comprising:
- an insulating substrate;
- a silicon layer formed on the substrate and including a source and a drain regions and a channel region located between the source and the drain regions;
- a gate insulating film covering the silicon layer;
- a gate electrode and a storage electrode formed on the gate insulating film;
- an interlayer insulating film covering the gate electrode and the storage electrode and having a first portion located over the storage electrode, thickness of the first portion being smaller than the rest portion of the interlayer insulating film;
- and
- a pixel electrode connected to the drain region and formed over the interlayer insulating film opposite the storage electrode.
A liquid crystal display comprising:
- an insulating substrate;
- a silicon layer formed on the substrate and including a source and a drain regions and a channel region located between the source and the drain regions;
- a gate insulating film covering the silicon layer;
- a gate electrode formed on the gate insulating film opposite the channel region;
- a storage electrode formed on the gate insulating film;
- an interlayer insulating film covering the gate electrode and the storage electrode and including a lower insulating film and an upper insulating film;
- and
- a pixel electrode electrically which is connected to the drain region and formed on the interlayer insulating film opposite the storage electrode,
- wherein a portion of the upper insulating film opposite the storage electrode is removed.
A manufacturing method of a liquid crystal display comprising the steps of:
- forming a silicon layer on an insulating substrate;
- forming a gate insulating film covering the silicon layer;
- forming a gate electrode and a storage electrode on the gate insulating film;
- depositing an interlayer insulating film covering the gate electrode and the storage electrode;
- partially etching the interlayer insulating film to reduce the thickness of a first portion of the interlayer insulating film opposite the storage electrode;
- and
- forming a pixel electrode on the interlayer insulating film.
A manufacturing method of a liquid crystal display comprising the steps of:
- forming a silicon layer on an insulating substrate;
- forming a gate insulating film covering the silicon layer;
- forming a gate electrode and a storage electrode on the gate insulating film;
- forming an interlayer insulating film covering the gate electrode and the storage electrode;
- depositing a passivation film on the interlayer insulating film;
- etching the passivation film to expose a portion of the interlayer insulating film on the storage electrode;
- and
- forming a pixel electrode on the passivation film and the interlayer insulating film.
A manufacturing method of a liquid crystal display comprising the steps of:
- forming a silicon layer on an insulating substrate;
- forming a gate insulating film covering the silicon layer;
- sequentially depositing a first metal film and a first interlayer insulating film on the gate insulating film;
- patterning the first interlayer insulating film;
- forming a gate electrode and a storage electrode by removing portions of the first metal film which are not covered with the patterned first interlayer insulating film;
- forming a second interlayer insulating film;
- and
- forming a pixel electrode.
A liquid crystal display comprising:
- an insulating substrate;
- a silicon layer formed on the substrate;
- a gate insulating film covering the silicon layer;
- a gate electrode formed on the gate insulating film;
- and
- a storage electrode formed on the gate insulating film,
- wherein the silicon layer comprises a doped source region, a doped drain region, undoped channel region located between the source and the drain regions, an undoped storage region adjoining to and separated from the channel region, and a first doped region adjoining to the storage region and connected to the drain region, wherein the storage electrode is located opposite the storage electrode.
A liquid crystal display comprising:
- an insulating substrate;
- a silicon layer formed on the substrate and including a doped source region, a doped drain region and an undoped channel region located between the source and the drain regions;
- a gate insulating film covering the silicon layer;
- a gate electrode formed on the gate insulating film and located opposite the channel region;
- a first storage electrode formed on the gate insulating film;
- a first interlayer insulting film for a storage capacitor covering the first storage electrode;
- a second electrode formed on the first interlayer insulating film;
- and
- a pixel electrode electrically connected to the drain region and contacting the second storage electrode.
A manufacturing method of a liquid crystal display comprising the steps of:
- forming a silicon layer on an insulating substrate;
- forming a gate insulating film covering the silicon layer;
- sequentially depositing a first metal film for a gate wire, a first interlayer insulating film and a second metal film for a storage capacitor;
- simultaneously patterning the first metal film, the first interlayer insulating film and the second metal film to form a storage capacitor including a first electrode, a first interlayer insulating film pattern formed on the first electrode and a second electrode formed on the first interlayer insulating film pattern, and a gate electrode;
- forming a doped source region and a doped drain region by injecting ions into the silicon layer using the gate electrode as a mask;
- and
- forming a pixel electrode electrically connected to the storage capacitor and the drain region.
Dependencies are inferred from the claim text.