CMOS image sensor
AssigneeFujitsu Limited
InventorsMasatoshi Kokubun, Chikara Tsuchiya
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AssigneeFujitsu Limited
InventorsMasatoshi Kokubun, Chikara Tsuchiya
Estimating the term…
A CMOS image sensor that reduces kTC noise in a wide band. A pixel circuit corresponding to one pixel includes a photoelectric conversion element for carrying out the photoelectric conversion of incident light, a reset transistor for resetting a cathode of the photoelectric conversion element to initial voltage, an amplifying transistor for converting electric charges accumulated in the photoelectric conversion element to voltage, and a row selection transistor for selecting signals output from pixel areas arranged in a row direction. A voltage control circuit controls the potential of a gate of the reset transistor during a period when the photoelectric conversion element is reset to change ON-state resistance of the reset transistor. By doing so, a cutoff frequency for a low-pass filter formed in the pixel circuit by ON-state resistance of the reset transistor and parasitic capacitance produced at the cathode on the photoelectric conversion element will be controlled.
A CMOS image sensor for getting images by outputting in order image signals sensed in each of pixel areas arranged like a matrix on the basis of X-Y addressing, the sensor comprising:
Dependencies are inferred from the claim text.