Device having a capicator with alterable capacitance, in particular a high-frequency microswitch

The device according to one of the preceding claims,

• wherein the electroconductive connection (121) is designed at least in some areas in the form of a strip and the structure (150) as a U-shaped or meander-shaped spring, in particular as a U-shaped or meander-shaped spring running flat in the plane of the strip.

The device according to one of the preceding claims,

• wherein the structure (150) is designed in such a way that it reduces or suppresses intrinsic mechanical stresses and/or those which occur due to temperature fluctuations in the electroconductive connection (121), in particular such stresses which are directed parallel to the plane of the structure (150).

The device according to one of the preceding claims,

• wherein the signal lead (120) of the waveguide is interrupted at a predetermined length by the electroconductive connection (121) and the structure (150);
• and the additional electroconductive connection (130) connects two ground leads (110, 111) of the waveguide which run parallel to the signal lead (120) in the area defined by the predetermined length.

The device according to one of the preceding claims,

• wherein the structure (150) and/or the electroconductive connection (121) is made of a material having coefficients of thermal expansion similar to that of silicon and a high modulus of elasticity compared to metals, in particular of molybdenum, tantalum or tungsten.

The device according to one of the preceding claims,

• wherein the change in the capacitance (C) of the capacitor (200) may be effected by an electrostatic force between the electroconductive connection (121) and the additional electroconductive connection (130).

The device according to one of the preceding claims,

• wherein the additional electroconductive connection (130) forms a first inductance (221) in series with the capacitor (200).

A device having a capacitor with alterable capacitance for changing the impedance of a section of a coplanar waveguide, in particular a high-frequency microswitch, having a ground lead (110, 111) and a signal lead (120) interrupted by an electroconductive connection (121) which is self-supporting at least in some areas, the capacitor (200) at least partially including the electroconductive connection (121) and an additional electroconductive connection (130) which is connected to the ground lead (110, 111),

• wherein the electroconductive connection (121) is made of a material having coefficients of thermal expansion similar to that of silicon and a high modulus of elasticity compared to metals, in particular of molybdenum, tantalum or tungsten.