Conductor abrasiveless chemical-mechanical polishing in integrated circuit interconnects

An integrated circuit comprising:

• a silicon substrate having a semiconductor device provided thereon;
• a device oxide layer deposited on the silicon substrate;
• a channel oxide layer formed on the device oxide layer having a channel opening provided therein;
• a barrier layer lining the channel opening and having a thickness of less than 8% of the width of the opening;
• and
• a conductor core filling the channel opening and connected to the semiconductor device, the conductor core over the barrier layer, the conductor core and barrier layer having a combined thickness less than the thickness of the channel oxide layer.

A method of manufacturing an integrated circuit comprising:

• providing a semiconductor substrate having a semiconductor device provided thereon;
• forming a dielectric layer on the semiconductor substrate;
• forming a opening in the dielectric layer;
• depositing a barrier layer to line the opening;
• depositing a conductor core over the barrier layer to fill the opening and connect to the semiconductor device;
• and
• chemical-mechanical polishing the conductor core using a solution having at least a 300:1 selectivity from the conductor core to the dielectric layer.

A method of manufacturing an integrated circuit comprising:

• providing a semiconductor substrate having a semiconductor device provided thereon;
• depositing a device oxide layer on the semiconductor substrate;
• depositing a channel oxide layer on the device oxide layer;
• forming a channel opening in the channel oxide layer;
• depositing a barrier layer to line the channel opening;
• depositing a conductor core to fill the channel opening and connect to the semiconductor device;
• and
• chemical-mechanical polishing the conductor core using the a solution of deionized water containing the following:
• oxalic acid from 0.1% to 2.0%,
• benzotriazole from 0.05% to 0.4%,
• 30% peroxide solution from 3% to 15%, and
• Triton, X-100 from 50 ppm to 100 ppm.