Nitride etchstop film to protect metal-insulator-metal capacitor dielectric from degradation and method for making same
AssigneeInternational Business Machines Corporation
InventorsJohn Chester Malinowski, Matthew David Moon, Vidhya Ramachandran, Kimball M. Watson
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Abstract
A multilayer semiconductor device that includes a metal-insulator-metal (MIM) capacitor including a first metal plate, a dielectric layer, and a second metal plate, a nitride etchstop layer formed above the MIM capacitor, a first interlayer dielectric formed on the nitride etchstop layer, and a first via and a second via that extend through at least the first interlayer dielectric to contact the nitride etchstop layer.
Claims20
A multilayer semiconductor device, comprising:
- a metal-insulator-metal (MIM) capacitor including a first metal plate, a dielectric layer, and a second metal plate;
- a nitride etchstop layer formed above the MIM capacitor;
- a first interlayer dielectric formed on the nitride etchstop layer;
- and
- a first via and a second via that extend through at least the first interlayer dielectric to contact the nitride etchstop layer.
A method of fabricating a multilayer semiconductor device, comprising:
- forming an metal-insulator-metal (MIM) capacitor including a first metal plate, a dielectric layer formed on the first metal plate, and a second metal plate formed on the dielectric layer;
- patterning the second metal plate;
- depositing a nitride etchstop layer above the MIM capacitor;
- forming an interlayer dielectric on the nitride etchstop layer;
- forming a first via and a second via through at least the interlayer dielectric by an anisotropic etch process to contact the nitride etchstop layer above the patterned second metal plate and above the first metal plate, respectively;
- and
- removing portions of the nitride etchstop layer, where the first via and the second via contact the nitride etchstop layer.
A method of fabricating a multilayer semiconductor device including a metal-insulator-metal (MIM) capacitor, comprising:
- patterning a metal top plate of the MIM capacitor by an anisotropic etch process;
- depositing a nitride etchstop layer above the MIM capacitor;
- forming an interlayer dielectric on the nitride etchstop layer;
- and
- forming a first via through the interlayer dielectric by an anisotropic etch process to contact the nitride etchstop layer.
Dependencies are inferred from the claim text.